CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 1/ 8
MTE013N08E3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=20A
80V
58A
9.4A
9.5 mΩ(typ)
Symbol
MTE013N08E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE013N08E3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE013N08E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 2/ 8
Symbol
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V(silicon limit)
(Note 5)
Continuous Drain Current @T
C
=25°C, V
GS
=10V(package limit)
(Note 5)
Continuous Drain Current @T
C
=100°C, V
GS
=10V
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current
Single Pulse Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=5mH, I
D
=20 Amps, V
DD
=30V
(Note 4)
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
T
L
T
PKG
Tj, Tstg
80
±20
70
58
49.6
9.4
7.5
232
40
1000
13.6
136
68
2.1
1.3
300
260
-55~+175
V
A
Repetitive Avalanche Energy
mJ
(Note 3)
T
C
=25°C
(Note 1)
T
C
=100°C
(Note 1)
Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
1.1
60
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature T
J(MAX)
=175°C.
4. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25
°
C. 100% tested by conditions of V
DD
=30V,
I
D
=20A, L=0.1mH, V
GS
=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTE013N08E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*t
d(ON)
*tr
*t
d(OFF)
*t
f
Ciss
Coss
Crss
Rg
Source-Drain Diode
*I
S
*I
SM
*V
SD
*trr
*Qrr
80
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
68
-
19
-
-
-
9.5
34.4
5.7
15.6
18
34.8
46.6
23
1483
221
105
3.8
-
-
0.73
21
20
-
-
4
-
±
100
1
5
12
-
-
-
-
-
-
-
-
-
-
-
58
232
1.1
-
-
V
mV/°C
V
S
nA
μA
m
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 3/ 8
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=20A
V
GS
=
±
20V
V
DS
=64V, V
GS
=0V
V
DS
=64V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=20A
nC
V
DS
=40V, V
GS
=10V, I
D
=58A
ns
V
DS
=40V, I
D
=58A, V
GS
=10V,
R
GS
=10
Ω
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
pF
Ω
A
V
ns
nC
I
S
=2.8A, V
GS
=0V
V
GS
=0V, I
F
=58A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTE013N08E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
200
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
6
V
V
GS
=5V
8
V
9V
7
V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 4/ 8
Brekdown Voltage vs Junction Temperature
1.4
180
I
D
, Drain Current (A)
10V
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
I
D
=250μA,
V
GS
=0V
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
V
GS
=6V
0.8
0.6
Tj=150°C
10
V
GS
=10V
0.4
0.2
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
I
D
=20A
3.2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
2.8
2.4
2
1.6
1.2
0.8
0.4
0
-75 -50 -25
V
GS
=10V, I
D
=20A
R
DSON
@ Tj=25°C : 9.5 mΩ typ
V
GS
=6V, I
D
=20A
R
DSON
@ Tj=25°C : 13.4mΩ typ
80
60
40
20
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE013N08E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
1
0.8
0.6
0.4
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
Spec. No. : C161E3
Issued Date : 2016.01.17
Revised Date : 2016.02.19
Page No. : 5/ 8
Threshold Voltage vs Junction Tempearture
Ciss
Capacitance---(pF)
1000
C
oss
I
D
=1mA
100
Crss
I
D
=250μA
10
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
10
Gate Charge Characteristics
10
V
DS
=15V
V
GS
, Gate-Source Voltage(V)
8
6
1
4
V
DS
=40V
2
I
D
=58A
0.1
Ta=25°C
Pulsed
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
6
12
18
24
30
Qg, Total Gate Charge(nC)
36
42
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
80
I
D
, Maximum Drain Current(A)
Silicon limit
I
D
, Drain Current(A)
100
R
DSON
Limited
70
60
50
40
30
20
10
0
25
Package limit
10μs
100μs
10
1ms
10ms
100ms
DC
1
T
C
=25°C, Tj(max)=175°C
V
GS
=10V, R
θ
JC
=1.1°C/W
Single Pulse
V
GS
=10V, R
θJC
=1.1°C/W
0.1
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTE013N08E3
CYStek Product Specification
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