Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes in a full pack plastic
envelope featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic. The
devices are intended for use in TV
receivers, monitors and switched
mode power supplies.
BY329X series
QUICK REFERENCE DATA
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
PARAMETER
BY329X
Repetitive peak reverse
voltage
Average forward current
Non-repetitive peak
forward current
Reverse recovery time
MAX. MAX. MAX.
-800
800
8
65
145
-1000 -1200
1000 1200
8
65
145
8
65
145
UNIT
V
A
A
ns
PINNING - SOD113
PIN
1
2
DESCRIPTION
cathode
anode
PIN CONFIGURATION
case
SYMBOL
k
1
a
2
case isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(AV)
PARAMETER
Non-repetitive peak reverse
voltage
Repetitive peak reverse voltage
Crest working reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
hs
≤
83 ˚C
sinusoidal; a = 1.57;
T
hs
≤
90 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-800
800
800
600
MAX.
-1000 -1200
1000 1200
1000
800
8
7
11
16
65
71
1200
1000
UNIT
V
V
V
A
A
A
A
A
A
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
hs
≤
83 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior
to surge; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
-
-40
-
28
150
150
A
2
s
˚C
˚C
1
Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from
both terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
BY329X series
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 20 A
V
R
= V
RWM
; T
j
= 125 ˚C
MIN.
-
-
TYP.
1.5
0.1
MAX.
1.85
1.0
UNIT
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
t
rr
Q
s
dI
R
/dt
PARAMETER
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/µs
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/µs
I
F
= 2 A; -dI
F
/dt = 20 A/µs
MIN.
-
-
-
TYP.
125
0.5
50
MAX.
145
0.7
60
UNIT
ns
µC
A/µs
May 1995
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
I
dI
F
dt
F
100
90
80
IFS (RMS) / A
BY329
trr
time
70
60
50
40
IFSM
Qs
25%
100%
30
20
10
I
R
I
rrm
0
1ms
10ms
0.1s
tp / s
1s
10s
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150˚C prior
to surge with reapplied V
RWM
.
IF / A
Tj = 150 C
Tj = 25 C
BY229F
20
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
BY329
Ths(max) / C
54
D = 1.0
78
30
15
0.5
0.2
0.1
I
t
p
D=
t
p
T
t
20
10
102
10
5
T
126
typ
max
0
0
2
4
6
IF(AV) / A
8
10
150
12
0
0
0.5
1
VF / V
1.5
2
Fig.2. Maximum forward dissipation, P
F
= f(I
F(AV)
);
square wave current waveform; parameter D = duty
cycle = t
p
/T.
BY329
Ths(max) / C
a = 1.57
1.9
10
4
5
126
2.2
2.8
102
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
15
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
78
10
Qs / uC
Tj = 150 C
Tj = 25 C
BY329
IF = 10 A
10 A
2A
1
1A
2A
1A
0
0
2
4
IF(AV) / A
6
150
8
0.1
1
10
-dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation, P
F
= f(I
F(AV)
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.6. Maximum Q
s
at T
j
= 25˚C and 150˚C
May 1995
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
1000
trr / ns
BY329
IF = 10 A
10A
1A
1A
10
Zth j-hs / (K/W)
1
100
0.1
P
D
t
p
Tj = 150 C
Tj = 25 C
10
1
10
-dIF/dt (A/us)
100
0.01
10us
100us
1ms
10ms
tp / s
0.1s
1s
t
10s
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25˚C
and 150˚C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
100
Cd / pF
BY329
10
1
1
10
VR / V 100
1000
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25˚C
May 1995
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.2
3.0
10.3
max
BY329X series
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
1.0 (2x)
0.6
2.54
5.08
0.5
2.5
0.9
0.7
Fig.10. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1995
5
Rev 1.000
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