UNISONIC TECHNOLOGIES CO., LTD
UF630
200V, 9A N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
1
TO-220
1
TO-220F
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
1
TO-220F1
1
TO-220F2
FEATURES
1
TO-262
1
TO-251
* R
DS(ON)
< 0.4Ω@ V
GS
= 10V, I
D
= 5A
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability
SYMBOL
1
TO-252
SOP-8
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-262
SOP-8
1
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6
S - - -
S - - -
S - - -
S - - -
S - - -
S - - -
S - - -
S G D D
7
-
-
-
-
-
-
-
D
Packing
8
Tube
-
Tube
-
Tube
-
Tube
-
Tube
-
- Tape Reel
Tube
-
D Tape Reel
Ordering Number
Lead Free
Halogen Free
UF630L-TA3-T
UF630G-TA3-T
UF630L-TF1-T
UF630G-TF1-T
UF630L-TF2-T
UF630G-TF2-T
UF630L-TF3-T
UF630G-TF3-T
UF630L-TM3-T
UF630G-TM3-T
UF630L-TN3-R
UF630G-TN3-R
UF630L-T2Q-T
UF630G-T2Q-T
-
UF630G-S08-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-049.J
UF630
MARKING
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262
SOP-8
Power MOSFET
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QW-R502-049.J
UF630
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
200
V
Drain-Gate Voltage (R
GS
= 20kΩ, T
J
=25°C ~125°C)
V
DGR
200
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
9
A
Pulsed Drain Current (Note 2)
I
DM
36
A
Single Pulse Avalanche Energy (Note 3)
E
AS
150
mJ
TO-220/TO-262
73
TO-220F1/ TO-220F
38
Power Dissipation
P
D
W
TO-220F2
42
TO-251/ TO-252
46
SOP-8
5
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J.
3. L = 4mH, I
AS
= 8.3A, V
DD
= 20V, R
G
= 25
Ω,
Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
100.3
83
1.71
3.31
2.98
2.7
24
°C/W
UNIT
PARAMETER
TO-220/TO-262
TO-220F1/ TO-220F
TO-220F2
Junction to Ambient
TO-251/ TO-252
SOP-8
TO-220/TO-262
TO-220F1/ TO-220F
Junction to Case
TO-220F2
TO-251/ TO-252
SOP-8
θ
JC
°C/W
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QW-R502-049.J
UF630
ELECTRICAL SPECIFICATIONS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
D(ON)
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
V
DS
> I
D(ON)
x R
DS(ON)MAX
,
V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN
200
9
TYP MAX UNIT
V
A
10
100
-100
μA
nA
nA
V
Ω
pF
pF
pF
30
50
50
40
30
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 90V, I
D
≈9A,
R
GS
= 9.1Ω,
Turn-On Rise Time
t
R
V
GS
= 10V, R
L
= 9.6Ω
Turn-Off Delay Time
t
D(OFF)
(Note 1, 2)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
GS
= 10V, I
D
= 9A,
V
DS
= 0.8 x Rated BV
DSS
Gate-Source Charge
Q
GS
I
G(REF)
= 1.5mA
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
= 9.0A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
I
S
= 9.0A, dI
S
/dt = 100A/μs
(Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤300μs,
Duty cycle≤2%.
Notes:
2. Essentially independent of operating temperature.
2
0.25
600
250
80
4
0.4
19
10
9
2
9
36
450
3
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QW-R502-049.J
UF630
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
L
BV
DSS
R
G
D.U.T.
V
DD
I
AS
V
DS
V
DD
0.01Ω
I
AS
Fig1. Unclamped Energy Test Circuit
0
t
p
t
AV
Fig.2 Unclamped Energy Waveforms
V
DS
R
L
0
V
DD
V
GS
D.U.T.
90%
10%
90%
R
G
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Fig.3 Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Fig.4 Resistive Switching Waveforms
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QW-R502-049.J
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