MO8009
High Frequency, Low Power Oscillator
Features
Applications
Any frequency between 115 MHz and 137 MHz accurate to 6 decimal
places
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to +85°C. For +125°C and/or
-55°C options, refer to MO8919 and MO8921
Low power consumption of +4.9 mA typical at 125 MHz, +1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Ideal for GPON/GPON, network switches, routers. servers,
embedded systems
for Ethernet, PCI-E, DDR, etc.
Ideal
Industry-standard packages:
Instant samples with Time Machine II and field programmable
oscillators
For AEC-Q100 oscillators, refer to MO8924 and MO8925
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are
at +25°C and nominal supply voltage.
Parameters
Output Frequency Range
Symbol
f
Min.
115
-20
Frequency Stability
F_stab
-25
-50
-20
-40
+1.62
+2.25
Supply Voltage
Vdd
+2.52
+2.7
+2.97
+2.25
–
Current Consumption
Idd
–
–
OE Disable Current
I_OD
–
–
–
Standby Current
I_std
–
–
Duty Cycle
Rise/Fall Time
Output High Voltage
Output Low Voltage
DC
Tr, Tf
VOH
VOL
45
–
–
–
90%
–
Typ.
–
Max.
Unit
Condition
Frequency Range
137
MHz
Frequency Stability and Aging
–
+20
ppm
Inclusive of Initial tolerance at +25°C, 1st year aging at +25°C,
–
+25
ppm
and variations over operating temperature, rated power supply
voltage and load.
–
+50
ppm
Operating Temperature Range
–
+70
°C
Extended Commercial
–
+1.8
+2.5
+2.8
+3.0
+3.3
–
+6.2
+5.5
+4.9
–
–
+2.6
+1.4
+0.6
+85
+1.98
+2.75
+3.08
+3.3
+3.63
+3.63
+7.5
+6.4
+5.6
+4.2
+4.0
+4.3
+2.5
+1.3
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
μA
μA
μA
No load condition, f = 125 MHz,
Vdd = +2.8V, +3.0V, +3.3V or +2.25 to +3.63V
No load condition, f = 125 MHz, Vdd =+ 2.5V
No load condition, f = 125 MHz, Vdd = +1.8V
Vdd = +2.5V to +3.3V, OE = GND, Output in high-Z state
Vdd = +1.8V, OE = GND, Output in high-Z state
ST
= GND, Vdd = +2.8V to +3.3V, Output is weakly pulled down
ST
= GND, Vdd = +2.5V, Output is weakly pulled down
Operating Temperature Range
T_use
Industrial
Supply Voltage and Current Consumption
Contact KDS for +1.5V support
ST
= GND, Vdd = +1.8V, Output is weakly pulled down
LVCMOS Output Characteristics
%
–
55
All Vdds
ns
1.0
2.0
Vdd = +2.5V, +2.8V, +3.0V or +3.3V, 20% - 80%
1.3
0.8
–
–
2.5
2.0
–
10%
ns
ns
Vdd
Vdd
Vdd =+1.8V, 20% - 80%
Vdd = +2.25V - +3.63V, 20% - 80%
IOH = -4.0 mA (Vdd = +3.0V or +3.3V)
IOL = +4.0 mA (Vdd = +3.0V or +3.3V)
Daishinku Corp.
Rev. 1.02
1389 Shinzaike, Hiraoka-cho, Kakogawa, Hyogo 675-0194 Japan
+81-79-426-3211
www.kds.info
Revised June 18, 2015
MO8009
High Frequency, Low Power Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
–
–
87
–
–
–
–
Max.
–
30%
150
–
Unit
Condition
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
VIH
VIL
Z_in
2.0
Startup Time
Enable/Disable Time
Resume Time
–
–
–
–
–
–
–
–
–
70%
–
50
Vdd
Vdd
kΩ
MΩ
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin 1, OE logic high or logic low, or
ST
logic high
Pin 1,
ST
logic low
Startup and Resume Timing
T_start
T_oe
T_resume
5.0
122
5.0
Jitter
RMS Period Jitter
T_jitt
1.9
1.8
12
14
0.5
1.3
3.0
4.0
25
30
0.9
2.0
ps
ps
ps
ps
ps
ps
f = 125 MHz, Vdd = +2.5V, +2.8V, +3.0V or +3.3V
f = 125 MHz, Vdd = +1.8V
f = 125 MHz, Vdd = +2.5V, +2.8V, +3.0V or +3.3V
f = 125 MHz, Vdd = +1.8V
Integration bandwidth = 900 kHz to 7.5 MHz
Integration bandwidth = 12 kHz to 20 MHz
ms
ns
ms
Measured from the time Vdd reaches its rated minimum value
f = 137 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time
ST
pin crosses 50% threshold
Peak-to-peak Period Jitter
T_pk
RMS Phase Jitter (random)
T_phj
Table 2. Pin Description
Pin
Symbol
Output
Enable
1
OE/ ST/NC
Standby
Functionality
H
[1]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
H
[1]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open
[1]
: Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
OE/ST/NC
1
4
Top View
VDD
No Connect
2
3
4
Notes:
GND
OUT
VDD
Power
Output
Power
GND
2
3
OUT
3.
Figure 1. Pin Assignments
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If
pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev. 1.02
Page 2 of 13
www.kds.info
MO8009
High Frequency, Low Power Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
[3]
Min.
-65
-0.5
–
–
–
Max.
+150
+4.0
+2000
+260
+150
Unit
°C
V
V
°C
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
+70°C
+85°C
Maximum Operating Junction Temperature
+80°C
+95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev. 1.02
Page 3 of 13
www.kds.info
MO8009
High Frequency, Low Power Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test
Point
tr
80% Vdd
50%
20% Vdd
High Pulse
(TH)
Period
tf
4
Power
Supply
0.1µF
1
3
15pF
(including probe
and fixture
capacitance)
2
Low Pulse
(TL)
Vdd
OE/ST Function
1kΩ
Figure 2. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
50% Vdd
Vdd
Pin 4 Voltage
T_start
No Glitch
during start up
[7]
ST Voltage
T_resume
CLK Output
HZ
CLK Output
HZ
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode)
Figure 5. Standby Resume Timing (ST Mode Only)
Vdd
50% Vdd
T_oe
OE Voltage
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
CLK Output
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Note:
7.
MO8009 has “no runt” pulses and “no glitch” output during startup or resume.
Figure 7. OE Disable Timing (OE Mode Only)
Rev. 1.02
Page 4 of 13
www.kds.info
MO8009
High Frequency, Low Power Oscillator
Performance Plots
[8]
1.8
7.5
2.5
2.8
3.0
3.3
DUT1
DUT6
20
DUT2
DUT7
DUT3
DUT8
DUT4
DUT9
DUT5
DUT10
7.0
15
Frequency (ppm)
6.5
6.0
5.5
5.0
4.5
4.0
115
117
119
121
123
125
127
129
131
133
135
137
10
5
0
-5
-10
-15
-20
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Idd (mA)
Frequency (MHz)
Temperature (°C)
Figure 8. Idd vs Frequency
Figure 9. Frequency vs Temperature, +1.8V
1.8 V
4.0
3.5
2.5 V
2.8 V
3.0 V
3.3 V
55
54
53
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
RMS period jitter (ps)
3.0
2.5
2.0
1.5
1.0
47
0.5
0.0
115
117
119
121
123
125
127
129
131
133
135
137
46
45
115
117
119
121
123
125
127
129
131
133
135
137
Duty cycle (%)
Frequency (MHz)
52
51
50
49
48
Frequency (MHz)
Figure 10. RMS Period Jitter vs Frequency
Figure 11. Duty Cycle vs Frequency
1.8 V
2.5
2.5 V
2.8 V
3.0 V
3.3 V
2.5
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
2.0
2.0
Rise time (ns)
1.5
Fall time (ns)
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Temperature (°C)
Temperature (°C)
Figure 12. 20%-80% Rise Time vs Temperature
Figure 13. 20%-80% Fall Time vs Tem
Rev. 1.02
Page 5 of 13
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