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UF4002G

产品描述1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小54KB,共2页
制造商Jinan Jing Heng Electronics
官网地址http://www.jinghenggroup.com/
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UF4002G概述

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

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R
UF4001G THRU UF4007G
ULTRA FAST RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:1.0Ampere
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-41
1.0(25.4)
MIN
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.20)
0.161(4.10)
MECHANICAL DATA
Case: JEDED DO-41 molded plastic body
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.034(0.85)
0.026(0.65)
DIA.
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
ambient temperature unless otherwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
UF
4001G
50
35
50
UF
4002G
100
70
100
UF
4003G
200
140
200
UF
4004G
400
280
400
1.0
30.0
UF
4005G
600
420
600
UF
4006G
800
560
800
UF
4007G
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mp
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
1.0
1.3
5.0
1.7
V
olts
μ
A
T
A
=100
°
C
100
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
50
15
-55 to+150
-55 to+150
75
12
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
8-4
HTTP
://
WWW.JINGHENGGROUP.COM

UF4002G相似产品对比

UF4002G UF4005G UF4004G UF4001G UF4007G UF4006G UF4003G
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

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