Using the IDT CMOS Oscillator technology, originally developed by
Mobius Microsystems, the MM8202 replaces quartz crystal based
resonators and oscillators with a monolithic CMOS IC at the thinnest
possible form factors without the use of any mechanical frequency
source or PLL. The product is specially designed to work with the
next generation USB 2.0 High Speed, USB 2.0 Full/Low Speed and
USB-IC (USB-InterChip) interface controller ICs, and high density
SIM-, and smart-cards.
Features
• All-CMOS Temperature Compensated Oscillator
• TimeStak
TM
: Available in die form for the thinnest and smallest
MCP options (-D package option)
• Ultra-low power operation (2mA typical at 1.8V supply)
• No quartz or PLL used: very low jitter performance leading to low
link Bit Error Rates (BER)
• Excellent reliability: Shock and vibration resistant
• Many frequencies are supported
• Factory programmable from 6 to 133MHz
Ordering Information
8202
1
-
12
2
VP
3
C
4
NSG
5
6
T
7
Pin Assignment
1) IDT Base Part Number
2) FF: Factory Programmed Frequency in MHz
3) Supply Voltage Configuration
•
•
•
•
•
•
•
•
•
•
•
•
VP: 1.8V to 3.3V continuous operation
V: 3.3V only operation
T: 2.5V only operation
P: 1.8V only operation
C: CMOS Output
-D: Wafer form 200um thickness
-C: Wafer form 350um thickness
NSG: 5x3.2, 4-Pin Package
NVG: 2.5x2.0, 4-Pin Package
No
1
Name
CE
MM8202
4-pin NSG
5mm x 3.2mm x 0.9mm
Top View
CE
1
2
VSS
Bottom View
VDD
4
3
OUT
4) Output Signal Type
5) Package Options*
Table 1. Pin Descriptions
Type
Input
Pullup
Description
Chip Enable. Internal Pullup. MM8202 is
enabled when HIGH.When LOW, OUT has
a weak pull-down to GND internally
System Ground
Frequency Output
Power Supply. Use a 0.1µF decoupling
capacitor between VDD and VSS
6) Temperature Grade
“ “: 0 to 70 C Commercial Temperature Range i.e. default is blank
“ “: Shipped in Tube i.e. default is blank
T: Shipped in Tape & Reel
o
7) Tape & Reel Option
2
This product is rated “Green”. Please contact factory for environmental compliancy
information.
VSS
OUT
VDD
Power
Output
Power
3
4
The Preliminary Information presented herein represents a product in pre-production. The noted characteristics are based on initial product characterization and/or qualification.
Integrated Device Technology, Incorporated (IDT) reserves the right to change any circuitry or specifications without notice
may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the
DC Characteristics
or
AC
Characteristics
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
Item
Supply Voltage, VDD
Input, V
I
(CE pin)
Output, V
O
(OUT pin)
Storage Temperature
4.6V
Rating
-0.5V to VDD + 0.5V
-0.5V to VDD + 0.5V
-65
o
C to 150
o
C
Electrical Characteristics
5
[3.3V]
VDD=3.0V to 3.6V, T
A
=0 to 70
o
C unless otherwise noted. Typical values are measured at VDD=3.3V, T
A
=35
o
C
Parameter
ElectroStaticDischa
rge
Supply Voltage
Input LOW level
Input HIGH level
Supply Current
Quiescent Current
Output LOW level
Output HIGH level
Output Frequency
Frequency Stability
Rise Time
Fall Time
Duty Cycle
Symbol
ESD
VDD
V
IL
V
IH
IDD
IDDQ
V
OL
V
OH
F
OUT
F
TOT
RT
FT
DC
Conditions
Human Body Model, tested per JESD D22-A114
Normal Operation
3
CE pin
CE pin
Active supply current, VDD=3.3V, T=35oC, no output load
CE=LOW, output disabled
I
OL
= -4mA
I
OH
= 4mA
Factory Programmable.Contact IDT for frequencies not listed
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “ ” device
option, over 0-70
o
C range
20% to 80% x VDD. Output load (C
L
) =8pF, NSG-option
80% to 20% x VDD. Output load (C
L
) =8pF, NSG-option
Clock output duty cycle. Measured under 80MHz, VDD/2,
C
L
=8pF
Clock output duty cycle. Measured over 80MHz, VDD/2,
C
L
=8pF
Output valid time after VDD meets the specified range&CE
transition
Total RMS Period Jitter (including random and
deterministic)
1,2
The absolute value of max change in the periods of any 2
adjacent cycles
1,2,4
1MHz offset from carrier
1,2
Min
4000
3.0
-0.3
VDD*0.7
Typ
Max
Units
V
3.3
2.5
0.2
VDD-0.5
6
3.6
VDD*0.3
VDD+0.3
3.0
1
0.5
133
+400
1.9
1.9
12,24,25,50
V
V
V
mA
µA
V
V
MHz
ppm
ns
ns
%
%
µs
ps
RMS
45
40
400
3.5
55
60
Power-up time
Period Jitter
Cycle-cycle Jitter
Phase Noise
t
on
PJ
RMS
CJ
PN
50
-140
-135
ps
dBc/Hz
Notes 1. Measured with a 50Ω to GND termination
2: Measured at 48MHz output frequency
3. The MM8202 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V.
4. Measured over 1000 cycles per JEDEC standard 65
5. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained
transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions.
C unless otherwise noted. Typical values are measured at VDD=2.5V, T
A
=35
o
C
Parameter
ElectroStaticDischa
rge
Supply Voltage
Input LOW level
Input HIGH level
Supply Current
Quiescent Current
Output LOW level
Output HIGH level
Output Frequency
Frequency Stability
Rise Time
Fall Time
Duty Cycle
Symbol
ESD
VDD
V
IL
V
IH
IDD
IDDQ
V
OL
V
OH
F
OUT
F
TOT
RT
FT
DC
Conditions
Human Body Model, tested per JESD D22-A114
Normal Operation
3
CE pin
CE pin
Active supply current, VDD=2.5V, T=35oC, no output load
CE=LOW, output disabled
I
OL
= -3mA
I
OH
= 3mA
Factory Programmable.Contact IDT for frequencies not listed
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “ ” device
option, over 0-70
o
C range
20% to 80% x VDD. Output load (C
L
) =7pF, NSG-option
80% to 20% x VDD. Output load (C
L
) =7pF, NSG-option
Clock output duty cycle. Measured under 100MHz at VDD/2,
C
L
=7pF
Clock output duty cycle. Measured over 100MHz at VDD/2,
C
L
=7pF
Output valid time after VDD meets the specified range&CE
transition
Total RMS Period Jitter (including random and
deterministic)
1,2
The absolute value of max change in the periods of any 2
adjacent cycles
1,2,4
1MHz offset from carrier
1,2
Min
4000
2.25
-0.3
VDD*0.7
Typ
Max
Units
V
2.5
2.25
0.2
VDD-0.4
6
2.75
VDD*0.3
VDD+0.3
2.75
1
0.4
133
+400
2.3
2.3
12,24,25,50
V
V
V
mA
µA
V
V
MHz
ppm
ns
ns
%
%
µs
ps
RMS
45
40
400
3.5
55
60
Power-up time
Period Jitter
Cycle-cycle Jitter
Phase Noise
t
on
PJ
RMS
CJ
PN
50
-140
-135
ps
dBc/Hz
Notes 1. Measured with a 50Ω to GND termination
2: Measured at 48MHz output frequency
3. The MM8202 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V.
4. Measured over 1000 cycles per JEDEC standard 65
5. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained
transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions.
C unless otherwise noted. Typical values are measured at VDD=1.8V, T
A
=35
o
C
Parameter
ElectroStaticDischa
rge
Supply Voltage
Input LOW level
Input HIGH level
Supply Current
Quiescent Current
Output LOW level
Output HIGH level
Output Frequency
Frequency Stability
Rise Time
Fall Time
Duty Cycle
Power-up time
Period Jitter
Cycle-cycle Jitter
Phase Noise
Symbol
ESD
VDD
V
IL
V
IH
IDD
IDDQ
V
OL
V
OH
F
OUT
F
TOT
RT
FT
DC
t
on
PJ
RMS
CJ
PN
Conditions
Human Body Model, tested per JESD D22-A114
Normal Operation
3
CE pin
CE pin
Active supply current, VDD=1.8V, T=35oC, no output load
CE=LOW, output disabled
I
OL
= -1.8mA
I
OH
= 1.8mA
Factory Programmable.Contact IDT for frequencies not listed
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “ ” device
option, over 0-70
o
C range
20% to 80% x VDD. Output load (C
L
) =4pF, NSG-option
80% to 20% x VDD. Output load (C
L
) =4pF, NSG-option
Clock output duty cycle. Measured at VDD/2, C
L
=4pF
Output valid time after VDD meets the specified range&CE
transition
Total RMS Period Jitter (including random and
deterministic)
1,2
The absolute value of max change in the periods of any 2
adjacent cycles
1,2,4
1MHz offset from carrier
1,2
Min
4000
1.62
-0.3
VDD*0.7
Typ
Max
Units
V
1.8
2.0
0.2
VDD-0.3
6
1.98
VDD*0.3
VDD+0.3
2.5
1
0.3
133
+400
2.75
2.75
55
12,24,25,50
V
V
V
mA
µA
V
V
MHz
ppm
ns
ns
%
µs
ps
RMS
45
400
3.5
50
-140
-135
ps
dBc/Hz
Notes 1. Measured with a 50Ω to GND termination
2: Measured at 48MHz output frequency
3. The MM8202 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V.
4. Measured over 1000 cycles per JEDEC standard 65
5. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained
transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions.
Application Diagram
Below is a representative application diagram to evaluate the MM8202. For 50Ohm terminated measurements, a balun is necessary to
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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