CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 1/ 9
MTB080P06J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free Lead Plating & Halogen-free Package
BV
DSS
I
D
@V
GS
=-10V, T
C
=25°C
R
DS(ON)
@V
GS
=-10V, I
D
=-10A
R
DS(ON)
@V
GS
=-5V, I
D
=-8A
-60V
-12.5A
82.5mΩ(typ)
107mΩ(typ)
Equivalent Circuit
MTB080P06J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTB080P06J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 2/ 9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=-10V
Continuous Drain Current @T
C
=100°C, V
GS
=-10V
Continuous Drain Current @T
A
=25°C, V
GS
=-10V
Continuous Drain Current @T
A
=70°C, V
GS
=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, I
D
=-11A, V
DD
=-50V
T
C
=25°C
T
C
=100°C
Total Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
-60
±20
-12.5
-7.9
-3.5
-2.8
-45
-12.5
60
31
12
2.5
1.6
-55~+150
V
A
mJ
W
°C
*
100% UIS testing in condition of V
D
=-15V, L=1mH, V
G
=-10V, I
AS
=-9A, Rated V
DS
=-60V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t≤10s
(Note 2)
Thermal Resistance, Junction-to-ambient, steady state
Symbol
R
θJC
R
θJA
Typical
3.6
15
40
Maximum
4
18
50
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25
°
C.
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 3/ 9
Min.
-60
-1.0
-
-
-
-
-
-
Typ.
-
-
-
-
-
82.5
104
11.5
Max.
-
-2.5
±
100
-1
-25
115
150
-
Unit
V
nA
μA
m
Ω
S
nC
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=
±
20V, V
DS
=0V
V
DS
=-48V, V
GS
=0V
V
DS
=-48V, V
GS
=0V, T
J
=85°C
V
GS
=-10V, I
D
=-10A
V
GS
=-5V, I
D
=-8A
V
DS
=-10V, I
D
=-10A
I
D
=-10A, V
DS
=-48V, V
GS
=-10V
V
DS
=-30V, I
D
=-10A, V
GS
=-10V,
R
G
=3
Ω
G
FS
*1
Dynamic
Qg
*1, 2
-
11.5
17.5
Qgs
*1, 2
-
2.4
-
Qgd
*1, 2
-
2.9
-
t
d(ON)
*1, 2
-
6.6
9.9
tr
-
17.4
26.1
*1, 2
t
d(OFF)
*1, 2
-
26.2
39.3
t
f
*1, 2
-
7.6
11.4
Ciss
-
542
-
Coss
-
57
-
Crss
-
40
-
Rg
-
5.3
-
Source-Drain Diode Ratings and Characteristics
I
S
*1
-
-
-12.5
I
SM
*1
-
-
-45
V
SD
*1
-
-0.97
-1.2
trr
-
13
19.5
Qrr
-
9.5
-
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=-25V, f=1MHz
f=1MHz
I
S
=-10A, V
GS
=0V
I
F
=-10A, dI
F
/dt=100A/μs
Recommended soldering footprint
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
18
-I
D
, Drain Current(A)
16
14
12
10
8
6
4
2
0
0
2
4
6
8
-V
DS
, Drain-Source Voltage(V)
10
-V
GS
=3V
0.4
1.4
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
5
V
10V,9V,8V,7V,6V
1.2
4.5V
1.0
4V
3.5
V
0.8
0.6
I
D
=-250
μ
A,
V
GS
=0V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
Tj=25°C
500
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
400
300
200
100
0
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
In descending order
V
GS
= -5V
-10V
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
-I
DR
, Reverse Drain Current(A)
10
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
R
DS(ON
), Static Drain-Source On-
State Resistance(mΩ)
I
D
=-10A
800
600
400
200
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=-10V, I
D
=-10A
R
DS(ON)
@Tj=25°C : 82.5mΩ typ.
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 5/ 9
Threshold Voltage vs Junction Tempearture
-V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=-1mA
1000
Capacitance---(pF)
1.0
0.8
0.6
0.4
0.2
I
D
=-250μA
100
C
oss
Crss
f=1MHz
10
0
10
20
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
100
μ
s
Gate Charge Characteristics
10
-V
GS
, Gate-Source Voltage(V)
8
6
4
2
0
V
DS
=-48V
I
D
=-10A
-I
D
, Drain Current (A)
10
R
DS(ON)
Limited
1ms
10ms
100ms
1
T
C
=25°C, Tj=150°C,
V
GS
=-10V, R
θ
JC
=4°C/W,
single pulse
1s
DC
0.1
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
1000
0
3
6
9
12
Qg, Total Gate Charge(nC)
15
Maximum Drain Current vs Case Temperature
16
20
18
16
-I
D
, Drain Current(A)
Typical Transfer Characteristics
V
DS
=-10V
-I
D
, Maximum Drain Current(A)
14
12
10
8
6
4
2
0
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
V
GS
=-10V, Tj(max)=150°C,
R
θ
JC
=4°C/W, single pulse
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
-V
GS
, Gate-Source Voltage(V)
MTB080P06J3
CYStek Product Specification
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