CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 1/ 9
MTB2D0N04F3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=20A
R
DS(ON)
@V
GS
=4.5V, I
D
=20A
40V
84A
17.3A
2.2 mΩ(typ)
2.5 mΩ(typ)
Symbol
MTB2D0N04F3
Outline
TO-263
G：Gate D：Drain S：Source
G
D
S
Ordering Information
Device
MTB2D0N04F3-0-T7-X
Package
Shipping
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB2D0N04F3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 2/ 9
Symbol
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V (silicon limit)
(Note 5)
Continuous Drain Current @T
C
=100°C, V
GS
=10V(silicon limit)
(Note 5)
Continuous Drain Current @T
C
=25°C, V
GS
=10V (package limit)
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, I
D
=50 Amps, V
DD
=30V
(Note 4)
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
T
L
T
PKG
Tj, Tstg
40
±20
146
103
84
17.3
13.8
584
50
1250
16
166
83
2.1
1.3
300
260
-55~+175
V
A
Repetitive Avalanche Energy
mJ
(Note 3)
T
C
=25°C
(Note 1)
T
C
=100°C
(Note 1)
Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
0.9
60
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature T
J(MAX)
=175°C.
4. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25
°
C. 100% tested by conditions of V
DD
=30V,
I
D
=20A, L=1mH, V
GS
=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTB2D0N04F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
*Qg (V
GS
=10V)
*Qg (V
GS
=4.5V)
*Qgs
*Qgd
*t
d(ON)
*tr
*t
d(OFF)
*t
f
Ciss
Coss
Crss
Rg
Source-Drain Diode
*I
S
*I
SM
*V
SD
*trr
*Qrr
40
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
29
-
44.7
-
-
-
2.2
2.5
150
75
25
35
31.2
30
122
28
6535
731
335
2.4
-
-
0.66
23
15
-
-
2.5
-
±
100
1
5
2.9
3.3
-
-
-
-
-
-
-
-
-
-
-
-
84
584
1
-
-
V
mV/°C
V
S
nA
μA
m
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 3/ 9
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=20A
V
GS
=
±
20V
V
DS
=40V, V
GS
=0V
V
DS
=32V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
nC
V
DS
=20V, V
GS
=10V, I
D
=84A
ns
V
DS
=20V, I
D
=20A, V
GS
=10V,
R
GS
=2.7
Ω
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
pF
Ω
A
V
ns
nC
I
S
=1A, V
GS
=0V
V
GS
=0V, I
F
=60A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTB2D0N04F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
200
10V, 9V, 8V, 7V, 6V, 5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250μA,
V
GS
=0V
I
D
, Drain Current(A)
160
V
GS
=4V
120
80
40
V
GS
=3V
V
GS
=3.5V
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
0.8
0.6
Tj=150°C
10
V
GS
=4.5V
0.4
0.2
V
GS
=10V
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
80
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=20A
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C :2.2mΩ typ.
V
GS
=10V, I
D
=20A
MTB2D0N04F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, NormalizedThreshold Voltage
10000
Ciss
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 5/ 9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
=250
μ
A
I
D
=1mA
Capacitance---(pF)
1000
C
oss
Crss
100
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
Gate Charge Characteristics
10
8
6
4
2
I
D
=84A
V
DS
=32V
V
DS
=20V
10
1
V
DS
=10V
Pulsed
Ta=25°C
0.1
V
GS
, Gate-Source Voltage(V)
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
20
40
60 80 100 120 140 160 180 200
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
1000
I
D
, Maximum Drain Current(A)
R
DS(ON)
Limited
10
μ
s
Maximum Drain Current vs Case Temperature
180
160
140
120
100
80
60
40
20
0
25
V
GS
=10V, R
θ
JC
=0.9°C/W
Package Limit
Silicon Limit
I
D
, Drain Current(A)
100
100
μ
s
1ms
10
10ms
100ms
DC
1
T
C
=25°C, Tj=175°C,
V
GS
=10V, R
θ
JC
=0.9°C/W
Single Pulse
0.1
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100 125 150
T
C
, Case Temperature(°C)
175
200
MTB2D0N04F3
CYStek Product Specification
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