25AA640/25LC640
64K SPI
™
Bus Serial EEPROM
Device Selection Table
Part
Number
25AA640
25LC640
25LC640
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max Clock
Frequency
1 MHz
2 MHz
3/2.5 MHz
Temp
Ranges
I
I
I, E
Description
The Microchip Technology Inc. 25AA640/25LC640
(25XX640
*
) is a 64K bit Serial Electrically Erasable
PROM [EEPROM]. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused,
transitions on its inputs will be ignored, with the
exception of Chip Select, allowing the host to service
higher priority interrupts.
Features
• Low-power CMOS technology
- Write current: 3 mA typical
- Read current: 500
µ
A typical
- Standby current: 500 nA typical
• 8192 x 8 bit organization
• 32 byte page
• Write cycle time: 5 ms max.
• Self-timed ERASE and WRITE cycles
• Block write protection
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP, SOIC and TSSOP packages
• Temperature ranges supported:
- Industrial (I): -40°C to +85°C
- Automotive (E): -40°C to +125°C
Block Diagram
Status
Register
HV Generator
EEPROM
I/O Control
Logic
Memory
Control
Logic
XDEC
Array
Page
Latches
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Sense Amp.
R/W Control
Y Decoder
Package Types
PDIP/SOIC
CS
SO
WP
V
SS
1
25XX640
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
HOLD
V
CC
CS
SO
1
2
3
4
TSSOP
8
7
6
5
SCK
SI
V
SS
WP
25XX640
*25XX640 is used in this document as a generic part number for the 25AA640/25LC640 devices.
2003 Microchip Technology Inc.
DS21223F-page 1
25AA640/25LC640
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C V
CC
= 1.8V to 5.5V
Automotive (E): T
A
= -40°C to +125°C V
CC
= 4.5V to 5.5V
Min
2.0
0.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.5
—
—
—
Max
V
CC
+1
V
CC
+1
0.8
0.2 V
CC
0.4
0.2
—
±1
±1
7
Units
V
V
V
V
V
V
V
µA
µA
pF
Conditions
V
CC
≥
2.7V
(Note)
V
CC
< 2.7V
(Note)
V
CC
≥
2.7V
(Note)
V
CC
< 2.7V
(Note)
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
= < 2.5V
I
OH
= -400
µA
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 3.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 2.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
DC CHARACTERISTICS
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
D9
Sym
V
IH
1
V
IH
2
V
IL
1
V
IL
2
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristics
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D10
I
CC
Read Operating Current
—
—
1
500
mA
µA
D11
D12
I
CC
Write
I
CCS
Standby Current
—
—
—
—
5
3
5
1
mA
mA
µA
µA
Note:
This parameter is periodically sampled and not 100% tested.
DS21223F-page 2
2003 Microchip Technology Inc.
25AA640/25LC640
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Characteristic
Clock Frequency
Min
—
—
—
100
250
500
150
250
475
500
30
50
50
50
100
100
—
—
150
230
475
150
230
475
50
50
—
—
—
0
—
—
—
100
100
200
100
100
200
100
150
200
100
150
200
—
100 k
Max
3
2
1
—
—
—
—
—
—
—
—
—
—
—
—
—
2
2
—
—
—
—
—
—
—
—
150
230
475
—
200
250
500
—
—
—
—
—
—
—
—
—
—
—
—
5
—
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
E/W
Cycles
(Note 3)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
(Note 1)
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 5.5V
(Note 1)
V
CC
= 1.8V to 5.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 5.5V
(Note 1)
V
CC
= 1.8V to 5.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
(Note 1)
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
Conditions
V
CC
= 4.5V to 5.5V
(Note 2)
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
AC CHARACTERISTICS
Param.
No.
1
Sym
F
CLK
2
T
CSS
CS Setup Time
3
T
CSH
CS Hold Time
4
5
T
CSD
T
SU
CS Disable Time
Data Setup Time
6
T
HD
Data Hold Time
7
8
9
T
R
T
F
T
HI
CLK Rise Time
CLK Fall Time
Clock High Time
10
T
LO
Clock Low Time
11
12
13
T
CLD
T
CLE
T
V
Clock Delay Time
Clock Enable Time
Output Valid from
Clock Low
Output Hold Time
Output Disable Time
14
15
T
HO
T
DIS
16
T
HS
HOLD Setup Time
17
T
HH
HOLD Hold Time
18
T
HZ
HOLD Low to Output
High-Z
HOLD High to Output
Valid
Internal Write Cycle
Time
Endurance
19
T
HV
20
21
T
WC
—
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
F
CLK
max. = 2.5 MHz for T
A
> 85°C.
3:
This parameter is not tested but established by characterization. For endurance estimates in a specific application,
please consult the Total Endurance™ Model which can be obtained from our web site.
2003 Microchip Technology Inc.
DS21223F-page 3
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