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MUR2050CT

产品描述10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小52KB,共2页
制造商Jinan Jing Heng Electronics
官网地址http://www.jinghenggroup.com/
下载文档 详细参数 全文预览

MUR2050CT概述

10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

10 A, 200 V, 硅, 整流二极管, TO-220AB

MUR2050CT规格参数

参数名称属性值
端子数量3
元件数量2
加工封装描述TO-220AB, 3 PIN
状态DISCONTINUED
包装形状矩形的
包装尺寸凸缘安装
端子形式THROUGH-孔
端子涂层NOT SPECIFIED
端子位置单一的
包装材料塑料/环氧树脂
结构COMMON CATHODE, 2 ELEMENTS
壳体连接CATHODE
二极管元件材料
二极管类型整流二极管
应用ULTRA FAST RECOVERY 高 POWER
相数1
反向恢复时间最大0.0350 us
最大重复峰值反向电压200 V
最大平均正向电流10 A
最大非重复峰值正向电流100 A

文档预览

下载PDF文档
R
MUR2020CT THRU MUR2060CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 20.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
JF
MUR2020CT
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011
/
65
/
EU
TO-220AB
0.185(4.70)
0.410(10.41)
0.390(9.91)
0.140(4.10)
0.147(3.74)
DIA
0.114(2.90)
0.102(2.60)
0.283(7.20)
0.244(6.20)
0.175(4.44)
0.055(1.39)
0.045(1.14)
1
0.159(4.05)
0.138(3.50)
0.053(1.34)
0.047(1.20)
PIN
2
3
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.516(13.10)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.023(0.58)
0.014(0.35)
0.114(2.90)
0.098(2.50)
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
0.208(5.28)
0.192(4.88)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
MUR
2020CT
200
140
200
MUR
2040CT
400
280
400
10.0
20.0
150.0
150
0.975
1.3
5
250
35
2.5
-55 to+150
-55 to+150
MUR
2060CT
600
420
600
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
Units
V
olts
V
olts
V
olts
A
mps
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJC
T
J
T
STG
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10.0 A per leg(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
1.7
V
olts
μA
ns
°C/W
°C
°C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
1. Pulse test: 300
μ
s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
9-34
HTTP
://
WWW.JINGHENGGROUP.COM

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