CT816L Series
DC Low Current Input 4-Pin Phototransistor Optocoupler
Features
•
•
•
•
•
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage
≥
7.5mm (S/SL Type)
External Creepage
≥
8.0mm (SLM Type)
Operating temperature range - 55 ° to 110 °C
C
RoHS compliance
REACH compliance
Halogen compliance (Optional)
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT816L series consists of a photo transistor
optically coupled to a gallium arsenide
Infrared-emitting diode in a 4-lead DIP package
different lead forming options.
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev.2
Oct, 2015
CT816L Series
DC Low Current Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
P
TOT
T
OPR
T
STG
T
SOL
Isolation voltage
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
200
-55 ~ +110
-55 ~ +150
260
Units
V
RMS
mW
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Emitter power dissipation
(≤1µs P.W,300pps)
60
1
6
100
mA
A
V
mW
Detector
P
D
B
VCEO
B
VECO
I
C
Detector power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
7
50
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev.2
Oct, 2015
CT816L Series
DC Low Current Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=1mA
V
R
= 6V
f= 1MHz
Min
-
-
-
Typ
1.3
-
15
Max
1.4
5
-
Units
V
µA
pF
Notes
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 20V, I
F
=0mA
Min
80
7
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
Transfer Characteristics
Symbol
Parameters
CT816L2
CT816L3
Test Conditions
Min
63
100
Typ
-
-
-
-
75
120
200
300
0.2
0.2
0.2
0.2
-
0.25
Max
125
200
Units
Notes
CTR
Current Transfer Ratio
CT816L4
CT816L5
CT816L2
CT816L3
I
F
= 1mA, V
CE
= 0.5V
160
250
32
50
I
F
= 0.5mA, V
CE
= 1.5V
CT816L4
CT816L5
CT816L2
I
F
= 1mA, I
C
= 0.32mA
I
F
= 1mA, I
C
= 0.50mA
I
F
= 1mA, I
C
= 0.80mA
I
F
= 1mA, I
C
= 1.25mA
V
IO
= 500V
DC
f= 1MHz
80
125
-
-
-
-
5x10
10
-
-
-
0.4
0.4
320
500
-
-
%
CTR
Current Transfer Ratio
%
Collector-Emitter
CT816L3
CT816L4
CT816L5
V
CE(SAT)
V
Saturation Voltage
0.4
0.4
-
1
pF
R
IO
C
IO
Isolation Resistance
Isolation Capacitance
CT Micro
Proprietary & Confidential
Page 3
Rev.2
Oct, 2015
CT816L Series
DC Low Current Input 4-Pin Phototransistor Optocoupler
Switching Characteristics
Symbol
t
r
t
f
t
on
t
off
Parameters
Rise Time
Fall Time
Turn-on Time
Turn-off Time
I
C
= 2mA, V
CC
= 5V,
R
L
= 100
Test Conditions
Min
-
-
-
-
Typ
4.9
6.5
8.6
6.9
Max
-
-
Units
Notes
µs
-
-
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev.2
Oct, 2015
CT816L Series
DC Low Current Input 4-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev.2
Oct, 2015
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