CT1110, CT1111, CT1112, CT1113, CT1114,
CT1115, CT1116, CT1117, CT1118, CT1119
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Features
•
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
Extra low coupling capacitance
DC input with transistor output
OperatingTemperature range - 55 ° to 110 °C
C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
•
•
Creepage distance > 8 mm
Green Package
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The CT1110, CT1111, CT1112, CT1113, CT1114,
CT1115, CT1116, CT1117, CT1118, CT1119 series
consists of a photo transistor optically coupled to a
gallium arsenide Infrared-emitting diode in a 5-lead
SOP Package.
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Aug, 2014
CT1110, CT1111, CT1112, CT1113, CT1114,
CT1115, CT1116, CT1117, CT1118, CT1119
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
Isolation voltage *1
Operating temperature
Storage temperature
Soldering temperature *2
Parameters
Ratings
5000
-55 ~ +110
-55 ~ +125
260
Units
V
RMS
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1µs P.W,300pps)
50
1
6
85
mA
A
V
mW
Detector
P
D
B
VCEO
B
VECO
B
VCBO
B
VEBO
I
C
Power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
150
80
7
80
7
50
mW
V
V
V
V
mA
Note:
1.
2.
Bias for 1minute with R.H.=40~60%. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Soldering Time: 10 seconds
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Aug, 2014
CT1110, CT1111, CT1112, CT1113, CT1114,
CT1115, CT1116, CT1117, CT1118, CT1119
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=10mA
I
F
= 50mA
Min
Typ
1.24
Max
1.4
1.5
5
-
Units
V
V
µA
pF
Notes
-
-
-
1.45
-
45
Reverse Current
Input Capacitance
V
R
= 6V
f= 1kHz
Detector Characteristics
Symbol
B
VCEO
B
VECO
B
VCBO
B
VEBO
I
CEO
I
CBO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Base Breakdown
Emitter-Base Breakdown
Collector-Emitter Dark Current
Collector-Base Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
I
C
= 100µA
I
E
= 100µA
V
CE
= 20V
V
CB
= 20V
Min
80
7
80
7
-
Typ
-
-
-
-
-
Max
-
-
-
-
100
20
Units
V
V
V
V
nA
nA
Notes
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Aug, 2014
CT1110, CT1111, CT1112, CT1113, CT1114,
CT1115, CT1116, CT1117, CT1118, CT1119
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Transfer Characteristics
Symbol
Parameters
CT1110
CT1115
CT1116
I
F
= 5mA, V
CE
= 5V
CT1117
CT1118
CT1119
80
130
200
60
63
I
F
= 10mA, V
CE
= 5V
CT1113
CT1114
CT1112
CT1113
CT1114
I
F
= 1mA, V
CE
= 5V
100
160
22
34
56
I
F
= 10mA, I
C
= 1mA
Voltage
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
5x10
10
1
pF
-
-
-
-
-
-
-
200
320
-
-
-
0.4
V
-
-
-
-
-
160
260
400
300
125
%
Test Conditions
Min
50
50
100
Typ
-
-
-
Max
600
150
300
Units
Notes
CTR
Current Transfer Ratio
CT1111
CT1112
V
CE(SAT)
R
IO
C
IO
Collector-Emitter Saturation
Switching Characteristics
Symbol
T
ON
T
OFF
t
r
t
f
Parameters
Turn On Time
Turn Off Time
Rise Time
Fall Time
Test Conditions
Min
-
-
Typ
5
4.2
2.8
4.1
Max
-
-
Units
Notes
CT Micro
Proprietary & Confidential
Page 4
Ω
I
C
= 5mA, V
CE
= 5V, R
L
= 100
µs
-
-
-
-
Rev 3
Aug, 2014
CT1110, CT1111, CT1112, CT1113, CT1114,
CT1115, CT1116, CT1117, CT1118, CT1119
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 3
Aug, 2014
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