INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
4N60
·FEATURES
·Drain
Current –I
D
= 4A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 600V(Min)
·Static
Drain-Source On-Resistance
: R
DS(on)
= 2.2Ω(Max)
·Avalanche
Energy Specified
·Fast
Switching
·Simple
Drive Requirements
·DESCRITION
·Designed
for high efficiency switch mode power supply.
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
600
±20
4
16
104
150
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL
CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.2
62.5
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS
(th
)
R
DS(
on
)
I
GSS
I
DSS
V
SD
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-Resistance
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
Forward On-Voltage
CONDITIONS
V
GS
= 0; I
D
= 0.25mA
V
DS
= V
GS
; I
D
= 0.25mA
V
GS
= 10V; I
D
= 2A
V
GS
=
±20V;V
DS
= 0
V
DS
= 600V; V
GS
= 0
I
S
= 4A; V
GS
= 0
MIN
600
2
4
2.2
4N60
MAX
UNIT
V
V
Ω
±100
nA
μA
1
2.0
V
·
isc website：www.iscsemi.cn
2
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