SiP32451, SiP32452 and SiP32453 are n-channel integrated
high side load switches that operate from 0.9 V to 2.5 V input
voltage range.
SiP32451, SiP32452 and SiP32453 have low input logic
control threshold that can interface with low voltage control
GPIO directly without extra level shift or driver. There is a pull
down at this EN logic control pin.
Turn on time is fast, less than 25 µs typically for input
voltage of 1.2 V or higher. SiP32451 and SiP32452 have
fast turn off delay time of less than 1 µs while SiP32453
features a guaranteed turn off delay of greater than 30 µs,
typically 90 µs.
SiP32451 features an output discharge for fast turn off.
SiP32451, SiP32452 and SiP32453 are available in compact
wafer level CSP package, WCSP4 0.8 mm x 0.8 mm with
0.4 mm pitch.
FEATURES
Low input voltage, 0.9 V to 2.5 V
Low R
ON
, 55 m typical
Fast turn on time
Low logic control with hysteresis
Reverse current blocking when disabled
Integrated pull down at EN pin
Output discharge (SiP32451)
4 bump WCSP 0.8 mm x 0.8 mm with 0.4 mm pitch
package
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?9991
•
•
•
•
•
•
•
•
APPLICATIONS
•
•
•
•
•
•
•
•
Battery operated devices
Smart phones
GPS and PMP
Computer
Medical and healthcare equipment
Industrial and instrument
Cellular phones and portable media players
Game console
TYPICAL APPLICATION CIRCUIT
V
IN
IN
OUT
V
OUT
SiP32451, SiP32452, SiP32453
C
IN
EN
EN
GND
C
OUT
GND
GND
Figure 1 - SiP32451, SiP32452, and SiP32453 Typical Application Circuit
Document Number: 63315
S12-2345-Rev. D, 8-Oct-12
For technical questions, contact:
powerictechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32451, SiP32452, SiP32453
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
Package
WCSP4: 4 Bumps
(2 x 2, 0.4 mm pitch,
208 µm bump height,
0.8 mm x 0.8 mm die size)
Marking
AA
- 40 °C to 85 °C
AB
AC
Note:
GE1 denotes halogen-free and RoHS compliant
Part Number
SiP32451DB-T2-GE1
SiP32452DB-T2-GE1
SiP32453DB-T2-GE1
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Input Voltage (V
IN
)
Enable Input Voltage (V
EN
)
Output Voltage (V
OUT
)
Maximum Continuous Switch Current (I
max.
)
Maximum Pulsed Current (I
DM
) V
IN
(Pulsed at 1 ms, 10 % duty cycle)
ESD Rating (HBM)
Junction Temperature (T
J
)
Thermal Resistance (
JA
)
a
Power Dissipation (P
D
)
a
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 3.6 mW/°C above T
A
= 70 °C.
Limit
- 0.3 to 2.75
- 0.3 to 2.75
- 0.3 to 2.75
1.2
2
4000
- 40 to 150
280
196
A
V
°C
°C/W
mW
V
Unit
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Input Voltage Range (V
IN
)
Operating Junction Temperature Range
Limit
0.9 to 2.5
- 40 to 125
Unit
V
°C
www.vishay.com
2
For technical questions, contact:
powerictechsupport@vishay.com
Document Number: 63315
S12-2345-Rev. D, 8-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32451, SiP32452, SiP32453
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified
V
IN
= 1 V, T
A
= - 40 °C to 85 °C
(Typical values are at T
A
= 25 °C)
V
IN
= 1.2 V, V
EN
= V
IN
, OUT = open
V
IN
= 2.5 V, V
EN
= V
IN
, OUT = open
SiP32451
SiP32452, SiP32453
EN = GND, OUT = open
Limits
Min.
a
0.9
-
-
-
-
-
-
-
-
-
-
-
V
EN
= 0 V, T
A
= 25 °C (SiP32451 only)
V
IN
= 1 V
V
IN
= 2.5 V
V
IN
= 2.5 V, V
EN
= 0 V
V
IN
= 2.5 V, V
EN
= 2.5 V
V
IN
= 1.2 V
V
IN
= 2.5 V
V
IN
= 1.2 V
V
IN
= 2.5 V
SiP32451, SiP32452
V
IN
= 1.2 V
Output Turn-Off Delay Time
t
d(off)
SiP32451, SiP32452
V
IN
= 2.5 V
SiP32453, V
IN
= 1.2 V
SiP32453, V
IN
= 2.5 V
R
LOAD
= 10
,
C
L
= 0.1 µF
T
A
= 25 °C
-
-
1.5
-
-
-
-
10
5
-
-
30
30
Typ.
b
-
10
34
-
-
-
0.001
56
55
54
54
3900
425
-
-
-
10
0.4
0.05
20
9.8
0.25
0.15
98
86
Max.
a
2.5
15
60
30
1
30
10
65
65
65
65
-
550
0.1
-
1
15
1
1
30
20
1
1
150
150
µs
ppm/°C
V
m
µA
Unit
V
Parameter
Operating Voltage
c
Quiescent Current
Off Supply Current
Off Switch Current
Reverse Blocking Current
Symbol
V
IN
I
Q
I
Q(off)
I
DS(off)
I
RB
EN = GND, OUT = 0 V
V
OUT
= 2.5 V, V
IN
= 0.9 V, V
EN
= 0 V
V
IN
= 1 V, I
L
= 200 mA, T
A
= 25 °C
V
IN
= 1.2 V, I
L
= 200 mA, T
A
= 25 °C
V
IN
= 1.8 V, I
L
= 200 mA, T
A
= 25 °C
V
IN
= 2.5 V, I
L
= 200 mA, T
A
= 25 °C
On-Resistance
R
DS(on)
On-Resistance Temp.-Coefficient
Output Pulldown Resistance
EN Input Low Voltage
c
EN Input High Voltage
c
EN Input Leakage
Output Turn-On Delay Time
Output Turn-On Rise Time
TC
RDS
R
PD
V
IL
V
IH
I
EN
t
d(on)
t
r
µA
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For V
IN
outside this range consult typical EN threshold curve.
Document Number: 63315
S12-2345-Rev. D, 8-Oct-12
For technical questions, contact:
powerictechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32451, SiP32452, SiP32453
Vishay Siliconix
PIN CONFIGURATION
Index-Bump A1
1
IN
2
OUT
2
OUT
1
IN
A
A
W
A
EN
B
B
GND
GND
EN
B
Backside
Bumpside
Figure 2 - WCSP4 2 x 2 Package
PIN DESCRIPTION
Pin Number
A1
A2
B1
B2
Name
IN
OUT
EN
GND
Function
This pin is the n-channel MOSFET drain connection. Bypass to ground through a 4.7 µF capacitor.
This pin is the n-channel MOSFET source connection. Bypass to ground through a 0.1 µF capacitor.
Enable input
Ground connection
TYPICAL CHARACTERISTICS
(internally regulated, 25 °C, unless otherwise noted)
45
40
I Q - Quiescent Current (μA)
35
30
25
20
15
10
5
0
0.8
1.0
1.2
1.4
1.6
1.8 2.0
V
IN
(V)
2.2
2.4
2.6
2.8
I
Q
- Quiescent Current (μA)
50
45
V
IN
= 2.5 V
40
35
30
25
20
15
V
IN
= 1.2 V
10
5
0
- 40
- 20
0
20
40
60
Temperature (°C)
80
100
V
IN
= 1 V
Figure 3 - Quiescent Current vs. Input Voltage
12
SiP32452 and SiP32453
I
Q(OFF)
- Off Supply Current (nA)
I
Q(OFF)
- Off Supply Current (nA)
10
100
10
1000
Figure 5 - Quiescent Current vs. Temperature
SiP32452 and SiP32453
8
V
IN
= 2.5 V
1
0.1
0.01
V
IN
= 1 V
0.001
V
IN
= 1.2 V
6
4
2
0
0.8
1.2
1.6
V
IN
(V)
2.0
2.4
2.8
0.0001
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 4 - Off Supply Current vs. Input Voltage
Figure 6 - Off Supply Current vs. Temperature
www.vishay.com
4
For technical questions, contact:
powerictechsupport@vishay.com
Document Number: 63315
S12-2345-Rev. D, 8-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32451, SiP32452, SiP32453
Vishay Siliconix
TYPICAL CHARACTERISTICS
(internally regulated, 25 °C, unless otherwise noted)
1200
SiP32451
1100
I
Q(OFF)
- Off Supply Current (nA)
1000
900
800
700
600
500
400
0.8
1
- 40
I
IQ(OFF)
- Off Supply Current (nA)
10 000
V
IN
= 2.5 V
100 000
SiP32451
1000
V
IN
= 1.2 V
100
V
IN
= 1 V
10
1.0
1.2
1.4
1.6
1.8
V
IN
(V)
2.0
2.2
2.4
2.6
2.8
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 7 - Off Supply Current vs. Input Voltage
Figure 10 - Off Supply Current vs. Temperature
1000
900
I
DS(off)
- Off Switch Current (nA)
800
700
600
500
400
300
200
0.8
100 000
V
IN
= 2.5 V
10 000
I
DS(off)
- Off Switch Current (nA)
1000
V
IN
= 1.2 V
100
10
V
IN
= 1 V
1
1.2
1.6
V
IN
(V)
2
2.4
2.8
0
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 8 - Off Switch Current vs. Input Voltage
66
64
R
DS
- On-Resistance (mΩ)
R
DS
- On-Resistance (mΩ)
62
60
58
56
54
52
50
0.8
I
O
= 0.2 A
I
O
= 0.5 A
I
O
= 1.2 A
75
Figure 11 - Off Switch Current vs. Temperature
V
IN
= 1.2 V
70
65
60
55
50
45
40
- 40
I
O
= 200 mA
1.2
1.6
V
IN
(V)
2.0
2.4
2.8
- 20
0
20
40
60
Temperature (°C)
80
100
Figure 9 - R
DS(on)
vs. V
IN
Figure 12 - R
DS(on)
vs. Temperature
Document Number: 63315
S12-2345-Rev. D, 8-Oct-12
For technical questions, contact:
powerictechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
