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1N4001SG_16

产品描述1 A, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小188KB,共4页
制造商TM Technology, Inc.
官网地址http://www.tmtech.com.tw/
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1N4001SG_16概述

1 A, SILICON, SIGNAL DIODE

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1N4001SG thru 1N4007SG
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
-
φ0.6mm
leads
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Rectifiers
MECHANICAL DATA
Case:
A-405
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
mm
1N
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
T
J
T
STG
SG
50
35
50
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
1N
SG
100
70
100
1N
SG
200
140
200
1N
SG
400
280
400
1
30
1.0
5
100
10
80
- 55 to +150
- 55 to +150
O
en
de
1N
SG
600
420
600
1N
SG
800
560
800
1N
UNIT
V
V
V
A
A
V
μA
pF
C/W
O
O
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
4001 4002 4003 4004 4005 4006 4007
SG
1000
700
1000
Maximum average forward rectified current
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
No
tR
T
J
=25
o
C
T
J
=125
o
C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
e co
d
A-405
C
C
Version: E14
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1407028

1N4001SG_16相似产品对比

1N4001SG_16 1N4001SG 1N4005SG 1N4006SG 1N4002SG 1N4004SG 1N4003SG 1N4007SG
描述 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE

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