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MUR1642CT

产品描述8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小52KB,共2页
制造商Jinan Jing Heng Electronics
官网地址http://www.jinghenggroup.com/
下载文档 详细参数 全文预览

MUR1642CT概述

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

8 A, 600 V, 硅, 整流二极管, TO-220AB

MUR1642CT规格参数

参数名称属性值
端子数量3
元件数量2
加工封装描述塑料, CASE 221A-09, 3 PIN
状态DISCONTINUED
包装形状矩形的
包装尺寸凸缘安装
端子形式THROUGH-孔
端子涂层锡 铅
端子位置单一的
包装材料塑料/环氧树脂
结构COMMON CATHODE, 2 ELEMENTS
壳体连接CATHODE
二极管元件材料
二极管类型整流二极管
应用ULTRA FAST RECOVERY POWER
相数1
反向恢复时间最大0.0600 us
最大重复峰值反向电压600 V
最大平均正向电流8 A
最大非重复峰值正向电流100 A

文档预览

下载PDF文档
R
MURF1620CT THRU MURF1660CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 16.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
JF
MURF1620CT
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
0.177(4.50)
Component in accordance to RoHS 2011
/
65
/
EU
0.138(3.50)
0.056(1.43)
0.043(1.10)
0.410(10.41)
0.390(9.91)
ITO-220AB
0.140(3.55)
0.128(3.25)
DIA
0.111(2.83)
0.101(2.57)
0.272(6.90)
0.256(6.50)
0.187(4.75)
0.167(4.25)
0.130(3.31)
0.111(2.81)
1
PIN
2
3
1.161(29.5)
1.083(27.5)
0.110(2.80)
0.551(14.00)
0.512(13.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08ounce, 2.24 gram
0.029(0.73)
0.019(0.47)
0.104(2.64)
0.096(2.44)
0.029(0.73)
0.019(0.47)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Per leg
Total device
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum average forward
rectified current(see Fig.1)
Maximum instantaneous forward voltage
at 8.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
MURF
1620CT
200
140
200
MURF
1640CT
400
280
400
8.0
16.0
150.0
150
0.975
5
500
35
3.0
-65 to+175
-65 to+175
1.3
10
MURF
1660CT
600
420
600
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
JC
V
olts
V
olts
V
olts
A
mps
A
mps
1.7
V
olts
uA
ns
°C/W
°C
°C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
T
J
T
STG
Notes:
1. Pulse test: 300μs pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
9-32
HTTP
://
WWW.JINGHENGGROUP.COM

 
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