Datasheet> 器件分类 > 半导体> 分立半导体> BY133G

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BY133G: 产品描述1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL; 产品类别半导体分立半导体; 文件大小172KB，共2页; 制造商Good-Ark; 官网地址http://www.goodark.com/

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BY133G概述

1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL

BY133G规格参数

参数名称	属性值
端子数量	2
元件数量	1
加工封装描述	塑料, DO-41, 2 PIN
状态	ACTIVE
包装形状	圆
包装尺寸	LONG FORM
端子形式	线
端子位置	AXIAL
包装材料	塑料/环氧树脂
结构	单一的
壳体连接	隔离
二极管元件材料	硅
二极管类型	信号二极管
最大重复峰值反向电压	50 V
最大平均正向电流	1 A

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1N4001G THRU 1N4007G, BY133G

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage -

50 to 1300 Volts

Forward Current -

1.0 Ampere

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

High temperature metallurgically bonded construction

Glass passivated cavity-free junction

Capable of meeting environmental standards of

MIL-S-19500

1.0 ampere operation at T

=75 with no thermal runaway

Typical I

less than 0.1 A

High temperature soldering guaranteed:

350 /10 seconds, 0.375 (9.5mm) lead length,

5 lbs. (2.3Kg) tension

Mechanical Data

Case:

DO-41 molded plastic over glass body

Terminals:

Plated axial leads, solderable per

MIL-STD-750, method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.012 ounce, 0.335 gram

DIM ENSIONS

DIM

inches

Min.

0.165

0.079

0.028

1.000

Max.

0.205

0.106

0.034

Min.

4.2

2.0

0.71

25.40

Max.

5.2

2.7

0.86

Note

Maximum Ratings and Electrical Characteristics

Ratings at 25

ambient temperature unless otherwise specified.

Symbols

4001G

4002G

4003G

4004G

4005G

4006G

4007G

133G

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=75

Peak forward surge current

8.3mS single half sine-wave superimposed

on rated load (MIL-STD-750D 4066 method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

=25

=125

RRM

RMS

(AV)

FSM

100

200

140

200

400

280

400

1.0

30.0

1.1

5.0

50.0

2.0

8.0

55.0

25.0

600

420

600

800

560

800

1000

700

1000

1300

910

1300

Volts

Amp

Amps

Volts

Typical reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Operating junction and storage temperature range

, T

STG

-65 to +175

Notes:

(1) Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A

(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts

(3) Thermal resistance from junction to ambient at 0.375 (9.5mm) lead length, P.C.B. mounted

BY133G相似产品对比

	BY133G	1N4001G	1N4002G	1N4003G	1N4004G	1N4005G	1N4006G
描述	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL	SIGNAL DIODE	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	SILICON, SIGNAL DIODE
端子数量	2	2	-	-	2	2	-
元件数量	1	1	-	-	1	1	-
加工封装描述	塑料, DO-41, 2 PIN	塑料, DO-41, 2 PIN	-	-	塑料 PACKAGE-2	GREEN, PLASTIC PACKAGE-2	-
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	-
包装形状	圆	圆	-	-	圆	ROUND	-
包装尺寸	LONG FORM	LONG FORM	-	-	LONG FORM	LONG FORM	-
端子形式	线	线	-	-	线	WIRE	-
端子位置	AXIAL	AXIAL	-	-	AXIAL	AXIAL	-
包装材料	塑料/环氧树脂	塑料/环氧树脂	-	-	塑料/环氧树脂	PLASTIC/EPOXY	-
结构	单一的	单一的	-	-	单一的	SINGLE	-
壳体连接	隔离	隔离	-	-	隔离	ISOLATED	-
二极管元件材料	硅	硅	-	-	硅	SILICON	-
二极管类型	信号二极管	信号二极管	SIGNAL DIODE	信号二极管	信号二极管	SIGNAL DIODE	-
最大重复峰值反向电压	50 V	50 V	-	-	400 V	600 V	-
最大平均正向电流	1 A	1 A	-	-	1 A	1 A	-

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