CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
Spec. No. : C796V8
Issued Date : 2016.03.15
Revised Date :
Page No. : 1/9
MTB40P06AV8
Description
BV
DSS
I
D
@T
A
=25°C, V
GS
=-10V
R
DSON
@V
GS
=-10V, I
D
=-4.9A
R
DSON
@V
GS
=-4.5V, I
D
=-3A
-60V
-5A
45mΩ(typ)
54mΩ(typ)
The MTB40P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB40P06AV8
Outline
DFN3×3
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTB40P06AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB40P06AV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=-10V
Continuous Drain Current @ T
C
=100°C, V
GS
=-10V
Continuous Drain Current @ T
A
=25°C, V
GS
=-10V
Continuous Drain Current @ T
A
=70°C, V
GS
=-10V
Pulsed Drain Current
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25℃
T
A
=70℃
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C796V8
Issued Date : 2016.03.15
Revised Date :
Page No. : 2/9
Limits
-60
±20
-14
-8.9
-5
-4
-56
*1
21
8.4
2.5
*3
1.6
*3
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
6
50
*3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
DSS
R
DS(ON)
*1
Min.
-60
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
45
54
11
1273
73
55
6.2
16.4
138.8
53.8
Max.
-
-2.5
±100
-1
-25
56
72
-
-
-
-
-
-
-
-
Unit
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±20V, V
DS
=0V
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V, Tj=125
°
C
V
GS
=-10V, I
D
=-4.9A
V
GS
=-4.5V I
D
=-3A
V
DS
=-5V, I
D
=-4.9A
G
FS
*1
Dynamic
Ciss
Coss
Crss
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
MTB40P06AV8
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DS
=-30V, I
D
=-1A, V
GS
=-10V,
R
G
=6
Ω
ns
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2016.03.15
Revised Date :
Page No. : 3/9
Electrical Characteristics(Cont.)
(Tj=25°C, unless otherwise specified)
Symbol
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
Source-Drain Diode
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
Typ.
24.3
3
4.3
-0.83
9.8
5
Max.
-
-
-
-1.3
-
-
Unit
nC
Test Conditions
V
DS
=-48V, I
D
=-5A, V
GS
=-10V
V
ns
nC
I
S
=-4.9A, V
GS
=0V
I
F
=-5A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB40P06AV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
40
10V, 9V, 8V, 7V, 6V, 5V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C796V8
Issued Date : 2016.03.15
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
0
2
4
6
8
-V
DS
, Drain-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=-250
μ
A,
V
GS
=0V
-I
D
, Drain Current(A)
30
4V
3.5V
3
V
-V
GS
=2.5V
20
10
0
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=-4V
V
GS
=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=-4.5V
Tj=150°C
V
GS
=-10V
10
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
0
5
10
15
-I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
2
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
I
D
=-4.9A
1.6
1.2
0.8
0.4
V
GS
=-10V, I
D
=-4.9A
R
DS(ON)
@Tj=25°C : 45mΩ typ.
0
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB40P06AV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C796V8
Issued Date : 2016.03.15
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
I
D
=-250μA
I
D
=-1mA
Capacitance---(pF)
1000
C
oss
100
Crss
0.4
0.2
10
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
-V
GS
, Gate-Source Voltage(V)
R
DS(ON)
Limit
Gate Charge Characteristics
10
8
6
4
2
I
D
=-5A
V
DS
=-48V
-I
D
, Drain Current(A)
10
100
μ
s
V
DS
=-30V
V
DS
=-12V
1
1ms
10ms
100ms
0.1
T
A
=25°C, Tj=150°, V
GS
=-10V
R
θ
JA
=50°C/W, Single Pulse
1s
DC
0.01
0.01
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
1000
0
0
4
8
12
16
20
Qg, Total Gate Charge(nC)
24
28
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
-I
D
, Maximum Drain Current(A)
6
5
4
3
2
1
0
Maximum Drain Current vs Junction Temperature
10
1
V
DS
=-5V
Pulsed
Ta=25°C
0.1
T
A
=25°C, V
GS
=-10V, R
θ
JA
=50°C/W
0.01
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
25
50
75
100
125
150
T
J
, Junction Temperature(°C)
175
MTB40P06AV8
CYStek Product Specification
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