WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
General Description
optimize board space.
•
SESD9D Series
efficiency.
The
Low power loss, high
is designed to protect Voltage
•
High current capability, low forward voltage drop.
sensitive
High surge capability.
•
components from ESD. Excellent clamping
capability, low leakage, and fast
protection.
time provide best
•
Guardring for overvoltage
response
Ultra high-speed switching.
in class
•
protection on designs that are exposed to ESD.
•
Silicon epitaxial planar chip, metal silicon junction.
Because
Lead-free parts
size,
environmental
for use in cellular
•
of its small
meet
it is suited
standards of
phones,
MIL-STD-19500 /228
MP3 players, digital cameras and many other
•
RoHS product for packing code suffix "G"
portable applications where board space
suffix "H"
premium.
Halogen free product for packing code
is at a
ESD Protection Diode
FM120-M
SESD9DxxV
THRU
FM1200-M
Package outline
SOD-123H
Pb Free Product
Features
Features
0.146(3.7)
Small Body Outline Dimensions:
0.130(3.3)
0.039″ x 0.024″(1.0 mm x 0.60 mm)
Stand−off Voltage: 3 V
−
12
V
Low Leakage
Response Time is Typically < 1 ns
0.012(0.3) Typ.
Low Body Height: 0.017″ (0.43 mm) Max
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy :
Applications
UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
Complies with the following standards
0.031(0.8) Typ.
•
Case : Molded plastic,
0.031(0.8)
Cellular phones audio
SOD-123H
IEC61000-4-2
Typ.
,
•
players
MP3
Terminals :Plated terminals, solderable per MIL-STD-750
Level 4 15 kV (air discharge)
Method 2026
Digital cameras
8 kV(contact discharge)
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Portable applications
MIL STD 883E - Method 3015-7 Class 3
•
Mounting Position : Any
mobile telephone
25 kV HBM (Human Body Model)
•
Weight : Approximated 0.011 gram
Pb-Free package is available
MAXIMUM RATINGS AND
”G”
RoHS product for packing code suffix
ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Halogen free product for packing code suffix “H”
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Functional diagram
Marking Code
Maximum RMS Voltage
Maximum DC Blocking Voltage
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
SOD-923
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
Maximum Ratings
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Parameter
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
0.50
Symbol
0.70
Value
0.85
IEC 61000-4-2 (ESD) Contact
Maximum Average Reverse Current at @T A=25℃
ESD Voltage
NOTES:
Rated DC Blocking Voltage
Per Human Body Model
P
D
T
J
,T
STG
T
L
@T A=125℃
8
25
400
60
0.5
10
Unit
kV
kV
V
W
℃
℃
0.9
0.92
m
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
Peak Pulse Power (t
p
= 8/20μs) @ T
A
=25℃
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Per Machine Model
-55 to 150
260
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
ESD Protection Diode
FM120-M
THRU
SESD9DxxV
FM1200-M
Pb Free Product
Electrical Parameter
Features
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Symbol
Parameter
•
Low profile surface mounted application in order to
I
PP
optimize board space.
Maximum Reverse Peak Pulse Current
•
Low power loss, high efficiency.
V
C
High current capability, low forward voltage drop.
Clamping Voltage @ I
PP
•
•
High surge capability.
V
RWM
Working Peak Reverse Voltage
•
Guardring for overvoltage protection.
Maximum Reverse Leakage Current @
I
•
Ultra high-speed switching.
R
epitaxial planar chip, metal silicon junction.
•
Silicon
V
RWM
I
•
Lead-free parts meet environmental standards of
Test Current
T
MIL-STD-19500 /228
V
•
RoHS product for packing code suffix
T
"G"
Breakdown Voltage @ I
BR
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
I
F
V
F
Epoxy
Forward Voltage @
retardant
: UL94-V0 rated flame
I
F
•
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Forward
Mechanical
Current
data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Electrical Characteristics
(T
A
=25℃ unless otherwise noted, V
F
=0.9V Max. @ I
F
=10mA for all types)
Ratings at 25℃ ambient temperature unless otherwise specified.
V
V
V
mA
Single phase half wave, 60Hz, resistive of inductive load.
SESD9D3V3
5.0
2.5
For capacitive load, derate current
5.7
20%
6.4
by
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Part
V
BR
V
F
C
•
Weight : Approximated 0.011 gram
Numbers
I
T
V
RWM
I
R
I
F
Typ.
Min.
Typ.
Max.
Max.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Note1)
V
3.0
13
12.0
30
21
30
µA
1
14
1
40
28
40
15
50
35
50
V
1.25
16
1.25
18
80
56
80
1.0
30
mA
10
10
10
100
70
100
pF
40
115
15
150
105
150
120
200
140
200
SESD9D5V
Marking Code
SESD9D12V
6.2
RATINGS
13.5
6.8
14.2
7.6
15.0
1.0
5.0
1
1.25
10
25
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
1.Capacitance
is measured at f=1MHz, V
R
=0V,T
A
=25℃.
14
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Maximum Recurrent Peak Reverse Voltage
1.0
12
20
60
42
60
V
20
V
Typical Characteristics
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig 1. Typical Breakdown Voltage
versus Temperature
Fig 2. Typical Leakage Current versus
Temperature
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
1.0A SURFACE
ESD Protection Diode
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
SESD9DxxV
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Fig 3.
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
8/20
μs
Pulse Waveform
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-
65
to +175
℃
Fig 4. Positive 8kV contact per IEC
61000-4-2-SESD9D5V
CHARACTERISTICS
-55 to +150
Fig 5. Negative 8kV contact per IEC
61000-4-2-SESD9D5V
0.50
0.70
0.5
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.85
0.9
0.92
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
FM120-M
SESD9DxxV
THRU
FM1200-M
1.0A SURFACE
ESD Protection Diode
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current
SOD-923 Mechanical Data
and thermal resistance.
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
Mechanical data
.022(0.55)
.026(0.65)
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)
.010(0.25)
. 03 0 ( 0. 7 5)
.03 3 (0 . 85 )
0.071(1.8)
0.056(1.4)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
.003(0.07)
.007(0.17)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.017(0.43)
Ratings at 25℃ ambient temperature unless otherwise specified.
.013(0.34)
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
.037(0.95)
Maximum Average Forward Rectified Current
.041(1.05)
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
20
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Dimensions in inches and (millimeters)
R
ΘJA
C
J
T
J
TSTG
Typical Junction Capacitance (Note 1)
-55 to +125
40
120
-55 to +150
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Marking
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Type number
Marking code
I
R
E
G
H
SESD9D3V3
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
SESD9D5V
2- Thermal Resistance From Junction to Ambient
SESD9D12V
NOTES:
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
模拟电子
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