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RN1673

产品描述Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
文件大小205KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1673概述

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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RN1673
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1673
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Two devices are incorporated into a Super-Mini (6 pin) package
Incorporating a bias resistor into a transistor reduces parts count. Reducing
the parts count enable the manufacture of ever more compact equipment
and save assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
B
R1
JEDEC
JEITA
E
2-2J1B
TOSHIBA
R1: 47 kΩ (Q1, Q2 common)
Weight: 15 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note*)
T
j
T
stg
Rating
50
50
5
100
300
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note*: Total rating
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-05-12

 
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