THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4425EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 10 A, V
GS
= 0 V
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
V
GS
= - 4.5 V
V
DS
= - 15 V, I
D
= - 11 A
V
GS
= 0 V
V
DS
= - 25 V, f = 1 MHz
-
-
-
-
-
-
1
-
-
-
-
-
-
2900
527
418
33.6
8.6
15.2
2.04
12
9
54
13
-
- 0.82
3630
660
525
50
-
-
4
18
14
81
20
- 70
- 1.2
A
V
ns
nC
pF
g
fs
V
DS
= - 30 V
V
DS
= - 30 V, T
J
= 125 °C
V
DS
= - 30 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 13 A
I
D
= - 13 A, T
J
= 125 °C
I
D
= - 13 A, T
J
= 175 °C
I
D
= - 10 A
- 30
- 1.5
-
-
-
-
- 30
-
-
-
-
-
-
- 2.0
-
-
-
-
-
0.009
-
-
0.015
35
-
- 2.5
± 100
-1
- 50
- 150
-
0.012
0.018
0.021
0.019
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 15 V, I
D
= - 13 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1845-Rev. B, 30-Jul-12
Document Number: 72179
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4425EY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 5 V
40
I
D
- Drain Current (A)
V
GS
= 4 V
Vishay Siliconix
50
40
I
D
- Drain Current (A)
30
30
T
C
= 25
°C
20
20
10
V
GS
= 3 V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
10
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Output Characteristics
10
50
Transfer Characteristics
T
C
= - 55
°C
8
I
D
- Drain Current (A)
40
g
fs
- Transconductance (S)
T
C
= 25
°C
30
6
T
C
= 125
°C
4
T
C
= 25
°C
20
2
T
C
= 125
°C
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
T
C
= - 55
°C
10
0
0
5
10
15
I
D
- Drain Current (A)
20
25
Transfer Characteristics
Transconductance
0.05
5000
0.04
R
DS(on)
- On-Resistance (Ω)
4000
C - Capacitance (pF)
C
iss
0.03
3000
0.02
V
GS
= 4.5 V
V
GS
= 10 V
2000
C
oss
C
rss
0.01
1000
0.00
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
S12-1845-Rev. B, 30-Jul-12
Capacitance
Document Number: 72179
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4425EY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
1.9
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 11 A
V
DS
= 15 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 11 A
Vishay Siliconix
1.7
1.5
1.3
1.1
0.9
0.7
0.5
V
GS
= 10 V
6
V
GS
= 4.5 V
4
2
0
0
10
20
30
40
50
Q
g
- Total
Gate
Charge (nC)
60
70
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.10
10
I
S
-
Source
Current (A)
T
J
= 150
°C
0.08
1
R
DS(on)
- On-Resistance (Ω)
0.06
0.1
T
J
= 25
°C
0.04
T
J
= 150
°C
T
J
= 25
°C
0.01
0.02
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
- 30
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
175
0.7
V
GS(th)
Variance (V)
I
D
= 250 μA
- 32
0.4
- 34
I
D
= 5 mA
0.1
- 36
- 0.2
- 38
- 0.5
- 50 - 25
0
25
50
75
100
125
150
- 40
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S12-1845-Rev. B, 30-Jul-12
Document Number: 72179
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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