THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM200N04-1m7L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 60 A, V
GS
= 0 V
V
DD
= 20 V, R
L
= 1
I
D
20 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 20 A
V
GS
= 0 V
V
DS
= 20 V, f = 1 MHz
-
-
-
-
-
-
0.4
-
-
-
-
-
-
8934
1592
928
194
25
40
0.8
22
17
70
16
-
0.8
11 168
1990
1160
291
-
-
1.2
33
26
105
24
600
1.5
A
V
ns
nC
pF
g
fs
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
I
D
= 20 A
40
1.5
-
-
-
-
200
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0012
-
-
0.0014
181
-
2.5
± 100
1
50
250
-
0.0017
0.0028
0.0034
0.0020
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 30 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1902-Rev. A, 13-Aug-12
Document Number: 67058
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM200N04-1m7L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
240
V
GS
= 10 V thru 6 V
V
GS
= 5 V
V
GS
= 4 V
180
I
D
- Drain Current (A)
I
D
- Drain Current (A)
90
T
C
= 25
°C
60
120
150
Vishay Siliconix
120
60
30
V
GS
= 3 V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= 125
°C
T
C
= - 55
°C
Output Characteristics
2.0
350
Transfer Characteristics
T
C
= - 55
°C
1.6
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
280
T
C
= 25
°C
1.2
T
C
= 25
°C
210
T
C
= 125
°C
0.8
140
0.4
T
C
= 125
°C
0.0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
70
0
0
14
28
42
56
70
I
D
- Drain Current (A)
Transfer Characteristics
0.005
15 000
Transconductance
0.004
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
12 000
0.003
9000
C
iss
6000
0.002
V
GS
= 4.5 V
0.001
V
GS
= 10 V
3000
C
oss
C
rss
0
0.000
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S12-1902-Rev. A, 13-Aug-12
Document Number: 67058
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM200N04-1m7L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.0
I
D
= 30 A
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 20 A
V
DS
= 20 V
1.7
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
Vishay Siliconix
6
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
20
40
60
80
100 120 140 160 180 200
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.005
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.004
0.003
T
J
= 150
°C
0.002
T
J
= 25
°C
0.001
0.1
T
J
= 25
°C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
50
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source Voltage (V)
48
I
D
= 10 mA
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
46
44
- 1.1
42
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
40
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S12-1902-Rev. A, 13-Aug-12
Document Number: 67058
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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