http://www.fujielectric.com/products/semiconductor/
2MBI1400VXB-120P-50
IGBT MODULE (V series)
1200V / 1400A / 2 in one package
High speed switching
Voltage drive
Low Inductance module structure
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Collector current
IGBT Modules
Features
Applications
Maximum Ratings and Characteristics
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Conditions
Tc=25°C
Tc=100°C
Continuous
1ms
1ms
1 device
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
between terminal and copper base (*1)
V
iso
Isolation voltage
between thermistor and others (*2)
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
Maximum ratings
1200
±20
1800
1400
2800
1400
2800
7650
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Units
V
V
A
W
°C
VAC
Nm
AC : 1min.
M5
M8
M4
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
(*4)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
(*4)
V
F
(chip)
trr
R
B
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 1400mA
V
GE
= 15V
I
C
= 1400A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 1400A
V
GE
= ±15V
R
G
= 1.6Ω
Collector-Emitter saturation voltage
Inverter
Input capacitance
Turn-on time
Turn-off time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Forward on voltage
V
GE
= 0V
I
F
= 1400A
I
F
= 1400A
T=25°C
T=100°C
T=25/50°C
Reverse recovery time
Thermistor
Resistance
B value
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
12.0
-
-
2400
6.0
6.5
7.0
-
1.75
2.20
-
2.10
-
-
2.15
-
-
1.65
2.10
-
2.00
-
-
2.05
-
-
128
-
-
1.00
-
-
0.40
-
-
0.15
-
-
1.20
-
-
0.15
-
-
1.90
2.35
-
2.05
-
-
2.00
-
-
1.80
2.25
-
1.95
-
-
1.90
-
-
0.20
-
-
5000
-
465
495
520
3305
3375
3450
Units
mA
nA
V
V
nF
µs
V
µs
Ω
K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.0195
-
-
0.0360
0.00420
-
-
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI1400VXB-120P-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
3000
2500
Collector current: Ic [A]
2000
1500
1000
500
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
8V
V
GE
=20V
Collector current: Ic [A]
12V
10V
15V
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
3000
2500
2000
1500
1000
500
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
8V
V
GE
= 20V
15V
12V
10V
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
= 15V / chip
3000
2500
Collector Current: Ic [A]
2000
1500
1000
500
0
0
1
2
3
4
Collector-Emitter Voltage: V
CE
[V]
Collector-Emitter Voltage: V
CE
[V]
125°C
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
2
0
5
10
15
20
25
Gate-Emitter Voltage: V
GE
[V]
Ic=2800A
Ic=1400A
Ic=700A
Tj=25°C
150°C
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
V
GE
= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
Collector-Emitter voltage: V
CE
[200V/div]
Gate-Emitter voltage: V
GE
[5V/div]
1000
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=1400A, Tj= 25°C
Cies
100
V
GE
V
CE
10
Cres
Coes
1
0
5
10
15
20
25
30
Collector-Emitter voltage: V
CE
[V]
0
2000 4000 6000 8000 10000 12000 14000
Gate charge: Qg [nC]
2
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1.6Ω, Tj=25°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1.6Ω, Tj=125°C, 150°C
10000
toff
1000
ton
Tj=125
o
C
Tj=150
o
C
toff
1000
ton
tr
tf
tr
100
100
tf
10
0
1000
2000
3000
10
0
1000
2000
3000
Collector current: Ic [A]
Collector current: Ic [A]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1400A, V
GE
=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
10000
Switching time: ton, tr, toff, tf [nsec]
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1.6Ω, Tj=125°C, 150°C
1000
Tj=125
o
C
Tj=150
o
C
toff
1000
ton
tr
100
tf
Tj=125
C
Tj=150
o
C
10
0.1
1
Gate resistance: R
G
[Ω]
10
o
750
500
Eoff
250
Eon
Err
0
1000
2000
3000
0
Collector current: Ic [A]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1400A, V
GE
=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
800
Tj=125
C
Tj=150
o
C
Collector current: Ic [A]
600
o
[INVERTER]
Reverse bias safe operating area (max.)
+V
GE
=15V, -V
GE
=15V, R
G
=1.6Ω, Tj=150°C
3000
2500
2000
1500
1000
500
0
400
Eoff
Eon
Err
200
Notice)
Please refer to page 6.
There is definision of V
CE
.
0
0
1
Gate resistance: R
G
[Ω]
10
0
200
400
600
800
1000 1200 1400
Collector-Emitter voltage: V
CE
[V]
3
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
3000
2500
Forward current: I
F
[A]
2000
1500
1000
500
0
0
1
2
3
Forward on voltage: V
F
[V]
150°C
125°C
Tj=25°C
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1.6Ω, Tj=25°C
10000
1000
Irr
100
trr
10
0
1000
2000
3000
Forward current: I
F
[A]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1.6Ω, Tj=125°C, 150°C
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Thermal resistanse: Rth(j-c) [°C/W]
Tj=125 C
Tj=150
o
C
1000
Irr
o
Transient Thermal Resistance (max.)
1
0.1
FWD
trr
100
0.01
IGBT
10
0
1000
2000
3000
Forward current: I
F
[A]
0.001
0.001
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
Temperature characteristic (typ.)
100
Resistance : R [kΩ]
10
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Temperature [°C]
4
2MBI1400VXB-120P-50
Outline Drawings, mm
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
LABEL2 (Fuji internal control codes)
* This label may be eliminated without notification.
LABEL
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
Main C1
Sense C1
G1
Main C2E1
Sense C2E1
TH1
TH2
G2
Sense E2
Main E2
5
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