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S29AL008D90BAI011

产品描述IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,TSSOP,48PIN,PLASTIC
产品类别存储   
文件大小780KB,共55页
制造商SPANSION
官网地址http://www.spansion.com/
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S29AL008D90BAI011概述

IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,TSSOP,48PIN,PLASTIC

S29AL008D90BAI011规格参数

参数名称属性值
端子数量48
最小工作温度-40 Cel
最大工作温度85 Cel
欧盟RoHS规范Yes
状态Transferred
ypeNOR TYPE
sub_categoryFlash Memories
ccess_time_max90 ns
boot_blockBOTTOM
command_user_interfaceYES
data_pollingYES
endurance1.00E6 Write/Erase Cycles
jesd_30_codeR-PDSO-G48
存储密度8.39E6 bi
内存IC类型FLASH
内存宽度16
备用存储器宽度8
umber_of_sectors_size1,2,1,15
位数524288 words
位数512K
组织512KX16
包装材料PLASTIC/EPOXY
ckage_codeTSSOP
ckage_equivalence_codeTSSOP48,.8,20
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
串行并行PARALLEL
wer_supplies__v_3/3.3
qualification_statusCOMMERCIAL
eady_busyYES
sector_size__words_16K,8K,32K,64K
standby_current_max5.00E-6 Am
最大供电电压0.0350 Am
表面贴装YES
工艺CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子间距0.5000 mm
端子位置DUAL
ggle_biYES

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This document has not been approved. Sharing this document with non-Spansion employees violates QS9000/TS16949 requirements.
S29AL008D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantage
Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery-
powered applications
Performance Characteristics
High performance
— Access times as fast as 55 ns
— Extended temperature range (-40°C to +125°C)
Manufactured on 200nm process technology
— Compatible with 0.32 µm and 230nm Am29LV160
devices
Ultra low power consumption (typical values
at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen
64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and fifteen
32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— A hardware method of locking a sector to prevent
any program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Cycling endurance: 1,000,000 cycles per
sector typical
Data retention: 20 years typical
— Reliable operation for the life of the system
Package option
48-ball FBGA
48-pin TSOP
44-pin SO
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Software Features
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Hardware Features
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array
data
Publication Number
S29AL008D_00
Revision
A
Amendment
3
Issue Date
June 16, 2005
“This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products
to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered may occur.”

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