Data Sheet
1.5V Drive Pch MOSFET
RAL045P01
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TUMT6
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(1.5V)
Abbreviated symbol : SC
Application
Switching
Packaging specifications
Type
Package
Code
Taping
TCR
3000
Inner circuit
(6)
(5)
(4)
Basic ordering unit (pieces)
RAL045P01
∗2
0.2Max.
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
12
0 to
8
4.5
*1
Unit
V
V
A
A
A
A
W
C
C
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
18
0.8
18
1
150
55
to
150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)
*
Limits
125
Unit
C
/ W
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1/6
2011.03 - Rev.A
RAL045P01
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
*
R
DS (on)
Min.
-
12
-
0.3
-
-
-
-
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
5.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
22
28
38
50
-
4200
350
330
16
60
400
150
40
6.5
6.0
Max.
10
-
10
1.0
30
39
57
100
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
m
Unit
A
V
A
V
Conditions
V
GS
=8V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=12V, V
GS
=0V
V
DS
=6V, I
D
=1mA
I
D
=4.5A, V
GS
=4.5V
I
D
=2.2A, V
GS
=2.5V
I
D
=2.2A, V
GS
=1.8V
I
D
=0.9A, V
GS
=1.5V
I
D
=4.5A, V
DS
=6V
V
DS
=6V
V
GS
=0V
f=1MHz
I
D
=2.2A, V
DD
6V
V
GS
=4.5V
R
L
=2.7
R
G
=10
I
D
=4.5A
V
DD
6V
V
GS
=4.5V
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=4.5A, V
GS
=0V
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2/6
2011.03 - Rev.A
RAL045P01
Electrical
characteristic curves
(Ta=25C)
Fig.1 Typical output characteristics(Ⅰ)
4.5
4
3.5
DRAIN CURRENT :
-I
D
[A]
3
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE :
-V
DS
[V]
V
GS
=
-1.0V
T
a
=25°C
Pulsed
Data Sheet
Fig.2 Typical output characteristics(Ⅱ)
4.5
4
3.5
DRAIN CURRENT :
-I
D
[A]
3
2.5
2
1.5
1
V
GS
=
-1.0V
0.5
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE :
-V
DS
[V]
V
GS
=
-2.0V
V
GS
=
-1.8V
V
GS
=
-1.5V
V
GS
=
-4.5V
V
GS
=
-4.0V
V
GS
=
-2.5V
T
a
=25°C
Pulsed
V
GS
=
-4.5V
V
GS
=
-4.0V
V
GS
=
-2.5V
V
GS
=
-2.0V
V
GS
=
-1.8V
V
GS
=
-1.5V
V
GS
=
-1.2V
V
GS
=
-1.2V
Fig.3 Typical Transfer Characteristics
10
V
DS
=
-6V
Pulsed
1
DRAIN CURRENT :
-I
D
[A]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
100
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
T
a
=25°C
Pulsed
V
GS
=
-1.5V
V
GS
=
-1.8V
V
GS
=
-2.5V
V
GS
=
-4.5V
0.1
0.01
0.001
0
0.5
1
1.5
2
GATE-SOURCE VOLTAGE :
-V
GS
[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
100
V
GS
=
-4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
10
0.1
1
DRAIN-CURRENT :
-I
D
[A]
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
V
GS
=
-2.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
10
0.1
1
DRAIN-CURRENT :
-I
D
[A]
10
10
0.1
1
DRAIN-CURRENT :
-I
D
[A]
10
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2011.03 - Rev.A
RAL045P01
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-1.5V
Pulsed
Data Sheet
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-1.8V
Pulsed
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
10
0.1
1
DRAIN-CURRENT :
-I
D
[A]
10
10
0.1
1
DRAIN-CURRENT :
-I
D
[A]
10
Fig.9 Forward Transfer Admittance vs. Drain Current
100
FORWARD TRANSFER ADMITTANCE : |Yfs|
[S]
V
DS
=
-6V
Pulsed
REVERSE DRAIN CURRENT :
-I
s
[A]
1
10
V
GS
=0V
Pulsed
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
10
0.1
1
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
0.01
0.1
0.1
1
DRAIN-CURRENT :
-I
D
[A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
T
a
=25°C
Pulsed
I
D
=
-4.5A
60
I
D
=
-0.9A
40
SWITCHING TIME : t [ns]
80
10
0.001
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE :
-V
SD
[V]
Fig.12 Switching Characteristics
1000
Ta=25°C
V
DD
=
-6V
V
GS
=-4.5V
R
G
=10W
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
t
d(off)
100
t
f
t
r
t
d(on)
20
0
0
2
4
6
8
GATE-SOURCE VOLTAGE :
-V
GS
[V]
10
0.01
0.1
1
10
100
DRAIN-CURRENT :
-I
D
[A]
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4/6
2011.03 - Rev.A
RAL045P01
Data Sheet
Fig.13 Dynamic Input Characteristics
5
10000
Fig.14 Typical Capacitance vs. Drain-Source Voltage
C
iss
GATE-SOURCE VOLTAGE :
-V
GS
[V]
4
CAPACITANCE : C [pF]
3
1000
C
oss
2
T
a
=25°C
V
DD
=
-6V
I
D
=
-4.5A
R
G
=10W
Pulsed
0
5
10
15
20
25
30
35
40
45
50
1
Ta=25°C
f=1MHz
V
GS
=0V
100
0.01
0.1
1
C
rss
0
10
100
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE :
-V
DS
[V]
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2011.03 - Rev.A
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