< Silicon RF Power Modules >
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the nominal output signal (P
out
=60W) attenuates up to 60 dB.
The output power and the drain current increase as the gate
voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
V
GG
is 4V (typical) and 5V (maximum).
At V
GG
=5V, the typical gate currents are 5mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>60W,
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current I
GG
=5mA (typ) @ V
GG
=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H4452M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
BLOCK DIAGRAM
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2M
Publication Date :Apr.2011
1
<
Silicon RF Power Modules
>
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
Drain Voltage
Gate Voltage
Input Power
Output Power
CONDITIONS
V
GG
<5V, P
in
=0W
V
DD
<12.5V, P
in
=50mW
f=440-520MHz,
V
GG
<5V
RATING
17
6
100
80
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
T
case(OP)
Operation Case Temperature Range
T
stg
Storage Temperature Range
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
SYMBOL PARAMETER
F
P
out
T
2f
o
in
I
GG
I
DD
—
Frequency Range
Output Power
Total Efficiency
2 Harmonic
Input VSWR
Gate Current
Leakage Current
Stability
V
DD
=0V, V
GG
=5V, P
in
=0W
V
DD
=17V, V
GG
=0V, P
in
=0W
V
DD
=10.0-15.2V, P
in
=25-70mW,
5<P
out
<65W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW,
P
out
=60W (V
GG
control), Load VSWR=20:1
nd
CONDITIONS
MIN
440
TYP
-
-
-
-
-
5
-
MAX
520
-
-
-35
3:1
6
1
UNIT
MHz
W
%
dBc
—
mA
mA
—
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
60
40
-
-
-
-
No parasitic oscillation
No degradation or
destroy
—
Load VSWR Tolerance
—
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date :Apr.2011
2
<
Silicon RF Power Modules
>
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
90
OUTPUT POWER P
out
(W)
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-30
80
TOTAL EFFICIENCY(%)
P
out
60
50
40
30
20
h
T
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
HARMONICS (dBc)
70
-40
-50
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
-60
-70
3
rd
10
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
-80
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
INPUT VSWR versus FREQUENCY
5
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
GATE CURRENT versus FREQUENCY
8
GATE CURRENT I
GG
(mA)
7
6
5
4
3
2
1
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
INPUT VSWR
r
in
(-)
4
I
GG
3
2
r
in
1
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
0
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
OUTPUT POWER P
out
(dBm)
DRAIN CURRENT I
DD
(A)
POWER GAIN Gp(dB)
60
P
out
24
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
POWER GAIN Gp(dB)
50
40
30
20
I
DD
Gp
20
16
12
8
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
50
40
30
20
I
DD
Gp
20
16
12
8
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
10
0
-10
-5
0
5
4
0
10
0
-10
-5
0
5
4
0
10
15
20
10
15
20
INPUT POWER P
in
(dBm)
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DRAIN CURRENT I
DD
(A)
POWER GAIN Gp(dB)
60
OUTPUT POWER P
out
(dBm)
P
out
24
20
Gp
POWER GAIN Gp(dB)
50
40
30
20
I
DD
Gp
20
16
12
8
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
50
40
30
20
I
DD
16
12
8
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
10
0
-10
-5
0
5
4
0
10
0
-10
-5
0
5
4
0
10
15
20
10
15
20
INPUT POWER P
in
(dBm)
INPUT POWER P
in
(dBm)
Publication Date :Apr.2011
3
<
Silicon RF Power Modules
>
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
20
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
I
DD
f=470MHz,
V
GG
=5V,
P
in
=50m W
P
out
20
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
GATE CURRENT I
GG
(mA)
DRAIN CURRENT I
DD
(A)
GATE CURRENT I
GG
(mA)
DRAIN CURRENT I
DD
(A)
80
70
60
50
40
30
20
10
0
2
f=440MHz,
V
GG
=5V,
P
in
=50m W
P
out
18
16
14
12
10
I
DD
8
6
4
2
0
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
20
16
14
12
10
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
I
DD
f=520MHz,
V
GG
=5V,
P
in
=50m W
P
out
20
18
16
14
12
10
8
6
4
2
0
80
70
60
50
40
30
20
10
0
2
f=490MHz,
V
GG
=5V,
P
in
=50m W
P
out
18
I
DD
8
6
4
2
0
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
80
OUTPUT POWER P
out
(W)
f=440MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
GATE CURRENT I
GG
(mA)
90
80
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
f=470MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
18
16
14
12
I
DD
16
14
12
70
60
50
40
30
20
10
0
0
70
60
50
40
30
20
10
0
0
I
DD
10
8
6
4
10
8
6
4
I
GG
2
0
5
6
I
GG
2
0
5
6
1
2
3
4
1
2
3
4
GATE VOLTAGE V
GG
(V)
GATE VOLTAGE V
GG
(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
80
OUTPUT POWER P
out
(W)
f=490MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
GATE CURRENT I
GG
(mA)
90
80
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
f=520MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
18
16
14
12
I
DD
16
14
12
I
DD
70
60
50
40
30
20
10
0
0
70
60
50
40
30
20
10
0
0
10
8
6
4
10
8
6
4
I
GG
2
0
5
6
I
GG
2
0
5
6
1
2
3
4
1
2
3
4
GATE VOLTAGE V
GG
(V)
GATE VOLTAGE V
GG
(V)
Publication Date :Apr.2011
4
<
Silicon RF Power Modules
>
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE DRAWING
(mm)
67±1
60±1
2-R2±0.5
49.8±1
(3.26)
19.4±1
10.7±1
① ②
③
④
15±1
12.5±1
17±1
44±1
56±1
3.1+0.6/-0.4
0.6±0.2
7.3±0.5
（2.6）
4±0.5
1
2
3
4
5
Publication Date :Apr.2011
5
（9.9）
18±1
RF Input (P
in
)
Gate Voltage(V
GG
)
Drain Voltage (V
DD
)
RF Output (P
out
)
RF Ground (Case)
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