SMK0160I
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
•
•
•
High Voltage : BV
DSS
=600V(Min.)
Low C
rss
: C
rss
=3.4pF(Typ.)
Low gate charge : Qg=3.9nC(Typ.)
Low R
DS(on)
: R
DS(on)
=11.5Ω(Max.)
G
Package Code
I-PAK
GD
S
I-PAK
PIN Connection
D
Ordering Information
Type No.
SMK0160I
Marking
SMK0160
S
Marking Diagram
SMK
0160
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Absolute maximum ratings
(
T
C
=25°C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
②
②
①
①
*
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
(Tc=100℃)
I
DM
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
600
±30
1.0
0.77
4.0
28
1.0
22
1.0
2.5
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
4.46
62.5
Unit
°C/W
KSD-T6Q005-002
1
SMK0160I
Electrical Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=0.5A
V
DS
=10V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
Min. Typ. Max.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
9.3
0.32
131
19.4
3.4
5.5
5
13
28
3.9
1.7
0.85
-
4.0
1
±100
11.5
-
164
24.3
4.3
-
-
-
-
4.9
-
-
Unit
V
V
uA
nA
Ω
S
pF
V
DD
=300V, I
D
=1.0A
R
G
=25Ω
-
③
④
-
-
-
-
ns
V
DS
=480V, V
GS
=10V
I
D
=1.0A
nC
③
④
-
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=1.0A
I
S
=1.0A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
190
0.53
1.0
4.0
1.4
-
-
A
V
ns
uC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=1080mH, I
AS
=0.3A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25℃
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
KSD-T6Q005-002
2
SMK0160I
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
- V
GS
-
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T6Q005-002
3
SMK0160I
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
ㅋ
C
C
Fig. 9 I
D
- T
a
`
Fig. 10 Safe Operating Area
*
KSD-T6Q005-002
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0160I
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T6Q005-002
5
模拟与混合信号
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