4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Features
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Temperature range - 55 ° to 100 °
C
C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1,
H11B2, H11B3, H11B255, and TIL113 series
consists of a photodarlington transistor optically
coupled to a gallium arsenide Infrared-emitting diode
in a 4-lead DIP package with bending option.
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Microelectronics
Proprietary & Confidential
Page 1
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
-55 ~ +100
-55 ~ +150
260
Units
V
RMS
0
C
0
C
0
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1µs P.W,300pps)
60
1
6
120
mA
A
V
mW
Detector
P
D
B
VCEO
B
VCBO
B
VECO
B
VEBO
Power dissipation
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage
150
55
55
7
7
mW
V
V
V
V
CT Microelectronics
Proprietary & Confidential
Page 2
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
V
F
I
R
C
IN
Parameters
Forward voltage
Forward voltage
Reverse Current
Input Capacitance
H11B3
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=10mA
I
F
=50mA
V
R
= 6V
f= 1MHz
Min
Typ
1.24
1.45
Max
1.4
1.5
5
-
Units
V
V
µA
pF
Notes
-
-
-
45
Detector Characteristics
Symbol
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Base Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
I
C
= 100µA
V
CE
= 10V, I
F
=0mA
Min
55
7
55
-
Typ
-
-
-
-
Max
-
-
-
100
Units
V
V
V
nA
Notes
B
VCEO
B
VECO
B
VCBO
I
CEO
Transfer Characteristics
Symbol
Parameters
4N29, 4N30
4N31
4N32, 4N33
Current
H11B1
500
I
F
= 1mA, V
CE
= 10V
200
100
I
F
= 10mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 1V
I
F
= 8mA, I
C
= 2mA
Emitter
Saturation
4N33
4N31, TIL113
H11B1, H11B2,
I
F
= 1mA, I
C
= 1mA
H11B3
H11B255
I
F
=50mA, I
C
= 50mA
V
IO
= 500V
DC
f= 1Mhz
-
1x10
11
0.25
pF
Rev 1
Apr, 2014
-
1.0
-
-
1.0
I
F
= 8mA, I
C
= 2mA
-
-
1.2
V
100
300
-
-
-
-
-
-
-
-
%
H11B2
Ratio
H11B3
H11B255
TIL113
Collector-
4N29, 4N30, 4N32,
1.0
-
-
-
-
I
F
= 10mA, V
CE
= 10V
Test Conditions
Min
100
50
500
Typ
-
-
-
Max
-
-
-
Units
Notes
CTR
Transfer
V
CE(SAT)
Voltage
R
IO
C
IO
Isolation Resistance
Isolation Capacitance
CT Microelectronics
Proprietary & Confidential
Page 3
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Switching Characteristics
Symbol
Parameters
4N29, 4N30,
I
F
= 200mA, I
c
= 50mA, R
L
=
4N31, 4N32,
100
-
-
4.7
µs
I
F
= 10mA, V
CE
= 10V, R
L
=
-
H11B3, H11B255
4N29, 4N30,
-
4N31
4N32, 4N33,
I
F
= 200mA, I
c
= 50mA, R
L
=
100
-
TIL113
H11B1, H11B2,
H11B3, H11B255
I
F
= 10mA, V
CE
= 10V, R
L
=
-
100
17
-
-
90
µs
-
30
100
24
-
Test Conditions
Min
Typ
Max
Units
Notes
T
ON
Turn On Time
4N33, TIL113
H11B1, H11B2,
T
OFF
Turn Off Time
CT Microelectronics
Proprietary & Confidential
Page 4
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Typical Characteristic Curves
CT Microelectronics
Proprietary & Confidential
Page 5
Rev 1
Apr, 2014
Microchip MCU
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