CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Features
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Operating temperature range - 55 ° to 110 °C
C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CNY17 and CNY17F series consists of a photo
transistor optically coupled to a gallium arsenide
Infrared-emitting diode in a 6-lead DIP package with
different lead forming options.
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: CNY17F without Base Connection
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Feb, 2014
CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
-55 ~ +110
-55 ~ +150
260
Units
V
RMS
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1µs P.W,300pps)
60
1
6
100
mA
A
V
mW
Detector
P
D
B
VCEO
B
VCBO
B
VECO
B
VEBO
Power dissipation
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage
150
80
80
7
7
mW
V
V
V
V
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Feb, 2014
CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
Typ
1.24
Max
1.4
5
-
Units
V
µA
pF
Notes
-
-
-
20
Detector Characteristics
Symbol
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Base
I
C
= 0.1mA
Breakdown
CNY17-1/2/3/4
Emitter-Base
I
E
= 0.1mA
Breakdown
Collector-Emitter Dark Current
Collector-Base
CNY17-1/2/3/4
Dark Current
V
CB
= 10V, I
F
=0mA
-
-
20
V
CE
= 10V, I
F
=0mA
-
-
50
nA
nA
7
-
-
V
80
-
-
Test Conditions
I
C
= 0.1mA
I
E
= 0.1mA
Min
80
7
Typ
-
-
Max
-
-
Units
V
V
V
Notes
B
VCEO
B
VECO
B
VCBO
B
VEBO
I
CEO
I
CBO
Transfer Characteristics
Symbol
Parameters
CNY17-1,CNY17F-1
CNY17-2,CNY17F-2
Test Conditions
Min
40
63
Typ
-
-
-
-
-
-
-
-
-
-
0.25
Max
80
125
200
320
Units
Notes
I
F
= 10mA, V
CE
= 5V
CNY17-3,CNY17F-3
100
160
13
22
I
F
= 1mA, V
CE
= 5V
34
56
I
F
= 10mA, I
C
= 2.5mA
-
1x10
11
-
Current
CNY17-4,CNY17F-4
CTR
Transfer
CNY17-1,CNY17F-1
%
-
-
-
-
0.3
-
-
pF
Rev 1
Feb, 2014
V
CNY17-2,CNY17F-2
CNY17-3,CNY17F-3
CNY17-4,CNY17F-4
Ratio
V
CE(SAT)
R
IO
C
IO
Collector- Emitter Saturation
Voltage
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
CT Micro
Proprietary & Confidential
Page 3
CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Switching Characteristics
Symbol
T
ON
t
r
T
OFF
t
f
Parameters
Turn On Time
Rise Time
Turn Off Time
Fall Time
Test Conditions
Min
-
-
Typ
4.3
9.8
3.9
6.9
Max
11.5
Units
µs
Notes
9.8
11.5
µs
9.8
CT Micro
Proprietary & Confidential
Page 4
Ω
I
c
= 2mA, V
CC
= 10V, R
L
= 100
-
-
Rev 1
Feb, 2014
CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 1
Feb, 2014
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