CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 1/10
MTD011N10RH8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DSON(TYP)
100V
45A
13.8A
V
GS
=10V, I
D
=11.5A 9.2mΩ
V
GS
=4.5V, I
D
=9.5A 12.8mΩ
Symbol
MTD011N10RH8
Outline
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTD011N10RH8-0-T6-G
Package
DFN 5
×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD011N10RH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25C)
Parameter
Symbol
10s
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 2/10
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25C, V
GS
=10V
Continuous Drain Current @ T
C
=100C, V
GS
=10V
Continuous Drain Current @ T
A
=25C, V
GS
=10V
Continuous Drain Current @ T
A
=70C, V
GS
=10V
Continuous Drain Current @ T
A
=85C, V
GS
=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.5mH, I
D
=33A, V
DD
=50V
Repetitive Avalanche Energy @ L=0.05mH
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25C
T
A
=70C
T
A
=85C
Operating Junction and Storage Temperature Range
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2, 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
15
12
10.8
100
±20
45
28
10
8
7.2
V
A
180
*1
40
272
5
*2
50
20
5.7
2.5
4.0
1.8
3.6
1.6
-55~+150
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
(Note 2)
Symbol
t≤10s
Steady State
R
θJA
Thermal Resistance, Junction-to-case
R
θJC
Typical
18
42
2.2
Maximum
22
50
2.5
Unit
C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in
²
FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25°C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.100% tested by conditions of L=0.5mH, I
AS
=20A, V
GS
=10V, V
DD
=50V
MTD011N10RH8
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 3/10
Min.
100
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
30
-
-
-
9.2
12.8
2841
313
33
54
11
12
21
18.6
56
7
2.4
-
-
0.82
39
69
Max.
-
2.7
-
±
100
1
25
12
17
-
-
-
-
-
-
-
-
-
-
-
45
180
1.2
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=20A
V
GS
=
±
20V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0V, Tj=125C
V
GS
=10V, I
D
=11.5A
V
GS
=4.5V, I
D
=9.5A
Dynamic
Ciss
Coss
Crss
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
pF
V
GS
=0V, V
DS
=25V, f=1MHz
nC
V
DS
=50V, V
GS
=10V, I
D
=11.5A
ns
Ω
V
DS
=50V, I
D
=11.5A, V
GS
=10V, R
GS
=3Ω
f=1MHz
Source-Drain Diode
I
S
*1
-
I
SM
*3
-
V
SD
*1
-
trr
-
Qrr
-
A
V
ns
nC
I
S
=15A, V
GS
=0V
I
F
=22A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
300μs,
Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTD011N10RH8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 4/10
unit : mm
MTD011N10RH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
100
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 5/10
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
, Drain Current (A)
80
6V
60
40
20
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
5V
4.5V
4V
V
GS
=3.5V
I
D
=250μA,
V
GS
=0V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1
0.8
0.6
Tj=150°C
Tj=25°C
100
V
GS
=4.5V
10
V
GS
=10V
0.4
0.2
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
2.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=11.5A
80
60
40
20
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=11.5A
R
DS(ON)
@Tj=25°C : 9.2mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD011N10RH8
CYStek Product Specification
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