Surface Mount Transient Voltage Suppressors (TVS)
SMBJ Series
Description
The SMBJ series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
5.0 To 440 V
600W
Uni-directional
Bi-directional
Features
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
For surface mounted applications in order to optimize board space
Low leakage
Uni and Bidirectional unit
Glass passivated junction
Low inductance
Excellent clamping capability
600W Peak power capability at 10
×
1000µs waveform Repetition rate
(duty cycle):0.01%
Fast response time: typically less than 1.0ps from 0 Volts to V
BR
min
Typical I
R
less than 5μA above 12V.
High Temperature soldering: 260°C/40 seconds at terminals
Typical maximum temperature coefficient
ΔV
BR
= 0.1%
×
V
BR
@25°C×
ΔT
Plastic package has Underwriters Laboratory Flammability 94V-0
Matte tin lead–free Plated
Halogen free and RoHS compliant
Typical failure mode is short from over-specified voltage or current
Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Functional Diagram
Bi-directional
Cathode
Uni-direction
Anode
Applications
TVS devices are ideal for the protection of I/O interfaces, V
CC
bus and other vulnerable circuits used in Telecom, Computer,
Industrial and Consumer electronic applications.
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
P
PPM
I
PP
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
600
See Next Table
5.0
100
3.5/5.0
-55 to +150
Unit
Watts
Amps
Watt
Amps
Voltage
°C
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Power Dissipation on Infinite Heat Sink at T
L
=75°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
Operating junction and Storage Temperature Range.
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. V
F
< 3.5V for V
BR
< 200V and V
F
< 6.5V for V
BR
> 201V.
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMBJ Series
5.0 To 440 V
600W
Electrical Characteristics (T
A
=25℃ unless otherwise noted)
Part Number
Uni
SMBJ5.0
SMBJ5.0A
SMBJ6.0
SMBJ6.0A
SMBJ6.5
SMBJ6.5A
SMBJ7.0
SMBJ7.0A
SMBJ7.5
SMBJ7.5A
SMBJ8.0
SMBJ8.0A
SMBJ8.5
SMBJ8.5A
SMBJ9.0
SMBJ9.0A
SMBJ10
SMBJ10A
SMBJ11
SMBJ11A
SMBJ12
SMBJ12A
SMBJ13
SMBJ13A
SMBJ14
SMBJ14A
SMBJ15
SMBJ15A
SMBJ16
SMBJ16A
SMBJ17
SMBJ17A
SMBJ18
SMBJ18A
SMBJ19
SMBJ19A
SMBJ20
SMBJ20A
SMBJ22
SMBJ22A
SMBJ24
SMBJ24A
SMBJ26
SMBJ26A
SMBJ28
SMBJ28A
SMBJ30
SMBJ30A
SMBJ33
SMBJ33A
SMBJ36
SMBJ36A
SMBJ40
SMBJ40A
SMBJ43
SMBJ43A
Bi
SMBJ5.0C
SMBJ5.0CA
SMBJ6.0C
SMBJ6.0CA
SMBJ6.5C
SMBJ6.5CA
SMBJ7.0C
SMBJ7.0CA
SMBJ7.5C
SMBJ7.5CA
SMBJ8.0C
SMBJ8.0CA
SMBJ8.5C
SMBJ8.5CA
SMBJ9.0C
SMBJ9.0CA
SMBJ10C
SMBJ10CA
SMBJ11C
SMBJ11CA
SMBJ12C
SMBJ12CA
SMBJ13C
SMBJ13CA
SMBJ14C
SMBJ14CA
SMBJ15C
SMBJ15CA
SMBJ16C
SMBJ16CA
SMBJ17C
SMBJ17CA
SMBJ18C
SMBJ18CA
SMBJ19C
SMBJ19CA
SMBJ20C
SMBJ20CA
SMBJ22C
SMBJ22CA
SMBJ24C
SMBJ24CA
SMBJ26C
SMBJ26CA
SMBJ28C
SMBJ28CA
SMBJ30C
SMBJ30CA
SMBJ33C
SMBJ33CA
SMBJ36C
SMBJ36CA
SMBJ40C
SMBJ40CA
SMBJ43C
SMBJ43CA
Marking
Uni
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LA
LB
LU
LV
LW
LX
LY
LZ
MD
ME
MF
MG
MH
MK
ML
MM
MN
MP
MQ
MR
MS
MT
Bi
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AA
AX
AY
WZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BA
BB
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
CL
CM
CN
CP
CQ
CR
CS
CT
Reverse
Stand-Off
Voltage
V
RWM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
19.0
19.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40.0
40.0
43.0
43.0
Breakdown
Voltage V
BR
(V)
@I
T
MIN
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.00
10.00
11.10
11.10
12.20
12.20
13.30
13.30
14.40
14.40
15.60
15.60
16.70
16.70
17.80
17.80
18.90
18.90
20.00
20.00
21.13
21.10
22.20
22.20
24.40
24.40
26.70
26.70
28.90
28.90
31.10
31.10
33.30
33.30
36.70
36.70
40.00
40.00
44.40
44.40
47.80
47.80
MAX
7.30
7.37
7.00
7.37
8.15
7.37
8.82
7.98
9.51
8.60
10.20
9.21
10.90
9.83
11.50
10.40
12.20
11.10
13.60
12.30
14.90
13.50
16.30
14.70
17.60
15.90
19.10
17.20
20.40
18.50
21.80
19.70
23.10
20.90
24.40
22.10
25.76
23.30
27.10
24.50
29.80
26.90
32.60
29.50
35.30
31.90
38.00
34.40
40.70
36.80
44.90
40.60
48.90
44.20
54.30
49.10
58.40
52.80
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
34.0
30.8
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
Maximum
Peak
Pulse
Current
I
PP
(A)
62.50
65.22
52.63
58.25
48.78
53.57
45.11
50.00
41.96
46.51
40.00
44.12
37.74
41.67
35.50
38.96
31.91
35.29
29.85
32.97
27.27
30.15
25.21
27.91
23.26
25.86
22.30
24.59
20.83
23.08
19.67
21.74
18.63
20.55
17.64
19.49
16.67
18.52
15.23
16.90
13.95
15.42
12.88
14.25
12.00
13.22
11.21
12.40
10.17
11.26
9.33
10.33
8.40
9.30
7.82
8.65
Maximum
Reverse
Leakage I
R
@V
RWM
(μA)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
2/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMBJ Series
5.0 To 440 V
600W
Electrical Characteristics
Part Number
Uni
SMBJ45
SMBJ45A
SMBJ48
SMBJ48A
SMBJ51
SMBJ51A
SMBJ54
SMBJ54A
SMBJ58
SMBJ58A
SMBJ60
SMBJ60A
SMBJ64
SMBJ64A
SMBJ70
SMBJ70A
SMBJ75
SMBJ75A
SMBJ78
SMBJ78A
SMBJ80
SMBJ80A
SMBJ85
SMBJ85A
SMBJ90
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ140
SMBJ140A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
SMBJ180
SMBJ180A
SMBJ190
SMBJ190A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
Note:
Bi
SMBJ45C
SMBJ45CA
SMBJ48C
SMBJ48CA
SMBJ51C
SMBJ51CA
SMBJ54C
SMBJ54CA
SMBJ58C
SMBJ58CA
SMBJ60C
SMBJ60CA
SMBJ64C
SMBJ64CA
SMBJ70C
SMBJ70CA
SMBJ75C
SMBJ75CA
SMBJ78C
SMBJ78CA
SMBJ80C
SMBJ80CA
SMBJ85C
SMBJ85CA
SMBJ90C
SMBJ90CA
SMBJ100C
SMBJ100CA
SMBJ110C
SMBJ110CA
SMBJ120C
SMBJ120CA
SMBJ130C
SMBJ130CA
SMBJ140C
SMBJ140CA
SMBJ150C
SMBJ150CA
SMBJ160C
SMBJ160CA
SMBJ170C
SMBJ170CA
SMBJ180C
SMBJ180CA
SMBJ190C
SMBJ190CA
SMBJ200CA
SMBJ220CA
SMBJ250CA
SMBJ300CA
SMBJ350CA
SMBJ400CA
SMBJ440CA
(T
A
=25℃ unless otherwise noted) (Continue)
Marking
Uni
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NA
NB
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PA
PB
PL
PM
PN
PP
PQ
PR
PS
PT
PU
PV
PW
PX
PZ
QE
QG
QK
QM
Bi
CU
CV
CW
CX
CY
CZ
DD
DE
DF
DG
DH
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DA
DB
DU
DV
DW
DX
DY
DZ
ED
EE
EF
EG
EH
EK
EA
EB
EL
EM
EN
EP
EQ
ER
ES
ET
EU
EV
EW
EX
EZ
FE
FG
FK
FM
Reverse
Stand-Off
Voltage
V
RWM
(V)
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
80.0
80.0
85.0
85.0
90.0
90.0
100.0
100.0
110.0
110.0
120.0
120.0
130.0
130.0
140.0
140.0
150.0
150.0
160.0
160.0
170.0
170.0
180.0
180.0
190.0
190.0
200.0
220.0
250.0
300.0
350.0
400.0
440.0
Breakdown
Voltage V
BR
(V)
@I
T
MIN
50.00
50.00
53.30
53.30
56.70
56.70
60.00
60.00
64.40
64.40
66.70
66.70
71.10
71.10
77.80
77.80
83.30
83.30
86.70
86.70
88.96
88.80
94.40
94.40
100.00
100.00
111.00
111.00
122.00
122.00
133.00
133.00
144.00
144.00
155.68
155.00
167.00
167.00
178.00
178.00
189.00
189.00
201.00
201.00
211.21
211.00
224.00
246.00
279.00
335.00
391.00
447.00
492.00
MAX
61.10
55.30
65.10
58.90
69.30
62.70
73.30
66.30
78.70
71.20
81.50
73.70
86.90
78.60
95.10
86.00
102.00
92.10
106.00
95.80
108.80
97.60
115.00
104.00
122.00
111.00
136.00
123.00
149.00
135.00
163.00
147.00
176.00
159.00
190.40
171.00
204.00
185.00
218.00
197.00
231.00
209.00
244.80
220.00
258.40
232.00
247.00
272.00
309.00
371.00
432.00
494.00
543.00
Test
Current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103.0
93.6
107.0
96.8
114.0
103.0
125.0
113.0
134.0
121.0
139.0
126.0
143.2
129.6
151.0
137.0
160.0
146.0
179.0
162.0
196.0
177.0
214.0
193.0
231.0
209.0
250.6
226.8
268.0
243.0
287.0
259.0
304.0
275.0
322.2
291.6
340.1
307.8
324.0
356.0
405.0
486.0
567.0
648.0
713.0
Maximum
Peak
Pulse
Current
I
PP
(A)
7.47
8.25
7.02
7.75
6.59
7.28
6.23
6.89
5.83
6.41
5.61
6.20
5.26
5.83
4.80
5.31
4.48
4.96
4.32
4.76
4.19
4.63
3.97
4.38
3.75
4.11
3.35
3.70
3.06
3.39
2.80
3.11
2.60
2.87
2.39
2.65
2.24
2.47
2.09
2.32
1.97
2.18
1.86
2.06
1.76
1.95
1.85
1.69
1.48
1.23
1.06
0.93
0.84
Maximum
Reverse
Leakage I
R
@V
RWM
(μA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1. Suffix 'A ' denotes 5% tolerance device. Without 'A' denotes 10% tolerance device
2. Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices
3. For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
3/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMBJ Series
5.0 To 440 V
600W
Ratings and Characteristic Curves (T
A
=25°C unless otherwise noted)
Figure 1 - Peak Pulse Power Rating Curve
10
Figure 2 - Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage %
100
P
PPM
- Peak Pulse Power (kW)
80
10
60
40
1
20
0.1
0.1
1
10
100
t
d
- Pulse Width (μs)
1000
10000
0
0
25
50
75
100
125
T
A
-Ambient temperature(°C)
150
175
Figure 3 - Pulse Waveform
150
Figure 4 - Typical Junction Capacitance
10000
I
PPM
- Peak Pulse Current, % I
RSM
t
r
=10µsec
Peak Value
IPPM
100
T
J
=25°C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Bi-directional
@zero bins
1000
Uni-directional
@zero bins
Half Value
I
PPM
(I
PPM
/2)
50
10/1000µsec. Waveform
as defined by R.E.A
Cj (pF)
Uni-directional @V
RWM
100
10
Tj=25°C
f=1.0MHz
Vsig=50mVp-p
Bi-directional @V
RWM
0
0
t
c
1.0
2.0
t - Time (ms)
3.0
4.0
1
1.0
10.0
100.0
1000.0
V
BR
-Reverse Breakdown Voltage (V)
Figure 5 - Steady State Power Derating Curve
P
M(AV)
, Steady State Power Dissipation (W)
5.0
Figure 6 - Maximum Non-Repetitive Surge Current
100
I
FSM
-Peak Forward Surge Current
(A)
T
J
=T
J
max.
8.3 ms Single Half Sine-Wave
4.0
80
3.0
2.0
60
40
1.0
0.0
0
25
50
75
100
125
150
175
200
T
L
- Lead Temperature(°C)
20
0
1
10
Number of Cycles at 60Hz
100
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
4/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMBJ Series
5.0 To 440 V
600W
I-V Curve Characteristics
Physical Specifications
Weight
Case
Polarity
Terminal
0.003 ounce, 0.093 gram
JEDEC DO-214AA Molded Plastic over
glass passivated junction
Color band denotes cathode except
Bipolar
Matte Tin-plated leads, Solderable per
JESD22-B102D
Environmental Specifications
Temperature Cycle
Pressure Cooker
High Temp. Storage
HTRB
Thermal Shock
JESD22-A104
JESD22-A102
JESD22-A103
JESD22-A108
JESD22-A106
Soldering Parameters
Reflow Condition
T
P
Ramp-up
Critical Zone
T
L
to T
P
Lead–free assembly
150°C
200°C
60 -180 Seconds
3°C/second max
3°C/second max
217°C
60 -150 Seconds
260 +0/-5°C
of
actual
peak
20 -40 Seconds
6°C/second max
8 minutes Max
280°C
-Temperature Min (T
s(min)
)
Pre Heat
-Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
T
L
T
S(max)
Temperature
Ramp-down
T
S(min)
Preheat
Average ramp up rate ( Liquidus Temp T
L
)
to peak
T
S(max)
to TL - Ramp-up Rate
- Temperature (T
L
) (Liquidus)
Time to peak temperature
(t 25℃ to peak)
25
Time
Reflow
- Time (min to max) (t
s
)
Peak Temperature (T
P
)
Time within 5°C
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
5/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
