SuperBlue™ Generation II LEDs
Preliminary Data Sheet
C430CB230-S200
Cree’s low-current SuperBlue Generation II LEDs combine highly efficient GaN with Cree’s proprietary G•SiC®
substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S2100 is designed for automotive
applications or any application where wavelength stability and chip robustness are critical.
FEATURES
•
Low Wavelength Variation
–
•
461-465 nm at 10 mA
APPLICATIONS
•
Automotive Applications
–
–
–
•
•
Dashboard Lighting
Interior Lighting
Toggle Switch Lighting
High Performance
–
0.85 mW (463 nm)
•
•
•
•
•
Superior SiC Substrate Technology
Excellent Chip-to-Chip Consistency
High Reliability
Single Wire Bond Structure
Class 2 ESD Rating
Electronic Signs and Displays
Indicator Lights
C430CB230-S200 Chip Diagram
Top View
Bottom View
Anode (+)
Die Cross Section
.-
CPR3DM Rev
Data Sheet:
200 x 200 μm
SiC Substrate
t = 250 μm
Mesa (junction)
180 x 180 μm
Backside
Metallization
Cathode (-)
Gold Bond Pad
114 μm Diameter
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 0 mA
Part Number
Forward
Voltage
(V
f
, V)
Typ.
C430CB230-S2100
4.0
Max.
4.5
Radiant Flux
(P, mW)
Min.
0.425
Typ.
0.80
Note 3
C430CB230-S200
15 mA
35 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse
Current
[I(Vr=5V), μA]
Max.
10
Peak
Wavelength
(λ
d
, nm)
Typ.
423
Dominant
Wavelength
(λ
d
, nm)
Min.
461
Typ.
463
Max.
465
Full Width
Half Max
(λ
D
, nm)
Typ.
59
Mechanical Specifications
Description
P-N Junction Area (μm
2
)
Top Area (μm
2
)
Bottom Area (μm
2
)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Diameter (μm)
C430CB230-S000
Dimension
180 x 180
200 x 200
200 x 200
250
114
1.1
114
Tolerance
± 35
± 35
± 35
± 25
± 20
± 0.5
± 20
Notes:
1.
2.
3.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (<5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classification
of Class II is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled
and operated at 10 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance A.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DM Rev. -
Shift (n
0.00
-0.50
Characteristic Curves
-1.00
0
5
10
If (mA)
15
20
25
These are representative measurements for the CB230 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Forward Current vs Forward Voltage
25.0
22.5
20.0
0.50
17.5
Shift (nm)
If (mA)
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0.0
1.0
2.0
Vf (V)
3.0
4.0
5.0
-1.00
0
5
10
If (mA)
15
20
25
1.00
Wavelength Shift vs Forward Current
0.00
-0.50
Relative Intensity vs Forward Voltage
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
If (mA)
15
20
25
Forward Current vs Forward Voltage
25.0
22.5
20.0
17.5
If (mA)
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0.0
1.0
2.0
Vf (V)
3.0
4.0
5.0
% Relative Intensity
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DM Rev. -
Radiation Pattern
This is a representative radiation pattern for the CB230 LED product. Actual patterns will vary slightly for each chip.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DM Rev. -
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