SO
D1
28
PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
Rev. 1 — 11 October 2011
Product data sheet
1. Product profile
1.1 General description
600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage
protection in high-temperature applications.
1.2 Features and benefits
Rated peak pulse power: P
PPM
= 600 W
High temperature stability T
j
185
C
Small plastic package suitable for
Reverse standoff voltage range:
surface-mounted design
V
RWM
= 3.3 V to 64 V
AEC-Q101 qualified
Reverse current: I
RM
= 0.001
A
Very low package height: 1 mm
1.3 Applications
Power supply protection
Automotive application
Industrial application
Power management
High-temperature applications
1.4 Quick reference data
Table 1.
Symbol
P
PPM
V
RWM
[1]
Quick reference data
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
[1]
Min
-
3.3
Typ
-
-
Max
600
64
Unit
W
V
In accordance with IEC 61643-321 (10/1000
s
current waveform).
NXP Semiconductors
PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym035
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PTVSxP1UTP series
[1]
Type number
[1]
Description
plastic surface-mounted package; 2 leads
Version
SOD128
-
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 4.
Marking codes
Marking code
C5
C6
C7
C8
C9
CA
CB
CC
CD
CE
CF
CG
CH
CJ
CK
CL
CM
CN
Type number
PTVS20VP1UTP
PTVS22VP1UTP
PTVS24VP1UTP
PTVS26VP1UTP
PTVS28VP1UTP
PTVS30VP1UTP
PTVS33VP1UTP
PTVS36VP1UTP
PTVS40VP1UTP
PTVS43VP1UTP
PTVS45VP1UTP
PTVS48VP1UTP
PTVS51VP1UTP
PTVS54VP1UTP
PTVS58VP1UTP
PTVS60VP1UTP
PTVS64VP1UTP
-
Marking code
CP
CR
CS
CT
CU
CV
CW
CX
CY
CZ
D1
D2
D3
D4
D5
D6
D7
-
Type number
PTVS3V3P1UTP
PTVS5V0P1UTP
PTVS6V0P1UTP
PTVS6V5P1UTP
PTVS7V0P1UTP
PTVS7V5P1UTP
PTVS8V0P1UTP
PTVS8V5P1UTP
PTVS9V0P1UTP
PTVS10VP1UTP
PTVS11VP1UTP
PTVS12VP1UTP
PTVS13VP1UTP
PTVS14VP1UTP
PTVS15VP1UTP
PTVS16VP1UTP
PTVS17VP1UTP
PTVS18VP1UTP
PTVSXP1UTP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
2 of 12
NXP Semiconductors
PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
[1]
[1]
Min
-
-
Max
600
see
Table 9
and
10
100
185
+185
+185
Unit
W
I
FSM
T
j
T
amb
T
stg
[1]
non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
single half-sine
wave; t
p
= 8.3 ms
-
-
55
65
A
C
C
C
In accordance with IEC 61643-321 (10/1000
s
current waveform).
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
ESD
[1]
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2, level 4
(contact discharge)
[1]
Min
-
Max
30
Unit
kV
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
6. Thermal characteristics
Table 8.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
200
120
60
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
thermal resistance from
junction to solder point
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PTVSXP1UTP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
3 of 12
NXP Semiconductors
PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
7. Characteristics
Table 9.
Characteristics per type; PTVS3V3P1UTP to PTVS7V0P1UTP
T
j
= 25
C unless otherwise specified.
Type
number
PTVSxxx
P1UTP
Reverse
standoff
voltage
V
RWM
(V)
Max
3V3
5V0
6V0
6V5
7V0
3.3
5.0
6.0
6.5
7.0
Breakdown voltage
V
BR
(V)
I
R
= 10 mA
Min
5.20
6.40
6.67
7.22
7.78
Typ
5.60
6.70
7.02
7.60
8.20
Max
6.00
7.00
7.37
7.98
8.60
Reverse leakage current
I
RM
(A)
at V
RWM
Typ
5
5
5
5
3
Max
600
400
400
250
100
at V
RWM
T
j
= 150
C
Typ
17
17
17
17
9
Max
8.0
9.2
10.3
11.2
12.0
75.0
65.2
58.3
53.6
50.0
Clamping
voltage V
CL
(V)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
PPM
(A) Typ
1.0
2.5
3.2
3.6
4.3
Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP
T
j
= 25
C unless otherwise specified.
Type
number
PTVSxxx
P1UTP
Reverse
standoff
voltage
V
RWM
(V)
Max
7V5
8V0
8V5
9V0
10V
11V
12V
13V
14V
15V
16V
17V
18V
20V
22V
24V
26V
28V
30V
33V
36V
PTVSXP1UTP_SER
Breakdown voltage
V
BR
(V)
I
R
= 1 mA
Min
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
15.60
16.70
17.80
18.90
20.00
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
Typ
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
16.40
17.60
18.75
19.90
21.00
23.35
25.60
28.10
30.40
32.80
35.10
38.70
42.10
Max
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
Reverse leakage current
I
RM
(A)
at V
RWM
Typ
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
Max
50
25
10
5
2.5
2.5
2.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
RWM
T
j
= 150
C
Typ
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Clamping
voltage V
CL
(V)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
Max
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
I
PPM
(A) Typ
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
5.0
5.5
6.5
7.1
8.1
9.2
10.3
11.4
13.2
14.1
15.9
16.4
18.5
20.0
23.8
24.9
29.1
30.6
34.4
37.5
42.3
© NXP B.V. 2011. All rights reserved.
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 11 October 2011
4 of 12
NXP Semiconductors
PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP
…continued
T
j
= 25
C unless otherwise specified.
Type
number
PTVSxxx
P1UTP
Reverse
standoff
voltage
V
RWM
(V)
Max
40V
43V
45V
48V
51V
54V
58V
60V
64V
40
43
45
48
51
54
58
60
64
Breakdown voltage
V
BR
(V)
I
R
= 1 mA
Min
44.40
47.80
50.00
53.30
56.70
60.00
64.40
66.70
71.10
Typ
46.80
50.30
52.65
56.10
59.70
63.15
67.80
70.20
74.85
Max
49.10
52.80
55.30
58.90
62.70
66.30
71.20
73.70
78.60
Reverse leakage current
I
RM
(A)
at V
RWM
Typ
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
Max
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
RWM
T
j
= 150
C
Typ
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Max
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
Clamping
voltage V
CL
(V)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
PPM
(A) Typ
48.1
51.6
55.2
58.2
62.5
66.1
71.4
74.1
80.0
PTVSXP1UTP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
5 of 12
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