RN4986
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4986
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Includeing two devices in US6 (ullta super mini type with 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
Unit: mm
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
5
100
Unit
V
V
V
mA
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Q2 Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
1
2001-06-07
RN4986
Q1, Q2 Common Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
*
Total rating
Marking
Equivalent Circuit
(Top View)
2
2001-06-07
RN4986
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 0.2V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1 MHz
Min
―
―
0.074
80
―
0.7
0.5
―
―
Typ.
―
―
―
―
0.1
―
―
250
3
Max
100
500
0.138
―
0.3
1.3
0.8
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−10mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−0.2V,
I
C
=
−5mA
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
Min
―
―
−0.074
80
―
−0.7
−0.5
―
―
Typ.
―
―
―
―
−0.1
―
―
200
3
Max
−100
−500
−0.138
―
−0.3
−1.3
−0.8
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circuit
―
―
Test Condition
―
―
Min
3.29
0.09
Typ.
4.7
0.1
Max
6.11
0.11
Unit
kΩ
―
3
2001-06-07
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
