CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.12.26
Page No. : 1/11
MTN4N60J3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Pb-free lead plating package
BV
DSS
: 600V
R
DS(ON)
: 2.8Ω(typ.)
I
D
: 4A
Applications
•
Open Framed Power Supply
•
Adapter
•
STB
Symbol
MTN4N60J3
Outline
TO-252(DPAK)
G
G：Gate
D：Drain
S：Source
D S
Ordering Information
Device
MTN4N60J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N60J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.12.26
Page No. : 2/11
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=4A, V
DD
=50V, L=4mH, V
G
=10V, starting TJ=+25
℃
.
3
.
I
SD
≤4A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting TJ=+25
℃
.
V
DS
V
GS
I
D
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
L
Pd
Tj, Tstg
600
±30
4*
2.4*
16*
34.9
4
5
4.5
300
50
0.4
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
2.5
110
Unit
°C/W
°C/W
MTN4N60J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
600
-
2.0
-
-
-
-
-
-
0.65
-
2
-
-
-
2.8
12.8
2.4
7.1
15
21
30
22
560
51
7.2
-
-
-
277
2.1
-
-
4.0
-
±
100
1
10
3.2
-
-
-
-
-
-
-
-
-
-
4
16
1.5
-
-
V
V/°C
V
S
nA
μA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.12.26
Page No. : 3/11
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=2A
V
GS
=
±
30
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0, Tj=125°C
V
GS
=10V, I
D
=2A
nC
I
D
=4A, V
DD
=480V, V
GS
=10V
V
DD
=300V, I
D
=4A, V
GS
=10V,
R
G
=25
Ω
, R
D
=75
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
μC
I
S
=4A, V
GS
=0V
V
GS
=0, I
F
=4A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTN4N60J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
6
Static Drain-Source On-state
Resistance-R
DS(on)
(Ω)
15V
10V
9V
7V
8
7
6
5
4
3
2
1
0
-100
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.12.26
Page No. : 4/11
Static Drain-Source On-resistance vs Ambient Temperature
Drain Current - I
D
(A)
4
6V
2
5.5V
5V
V
GS
=4.5V
I
D
=2A,
V
GS
=10V
0
0
10
20
30
Drain-Source Voltage -V
DS
(V)
40
-50
0
50
100
Ambient Temperature-Ta(°C)
150
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
5
Static Drain-Source On-State
Resistance-R
DS(on)
(Ω)
4.5
4
3.5
3
2.5
2
0.1
1
Drain Current-I
D
(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
V
GS
=10V
8
Ta=25°C
Drain Current-I
D(on)
(A)
6
V
DS
=30V
4
V
DS
=10V
2
0
10
0
5
10
15
20
Gate-Source Voltage-VGS(V)
10
Reverse Drain Current-I
DR
(A)
9
Static Drain-Source On-State
Resistance-R
DS(ON)
(Ω)
8
7
6
5
4
3
2
1
0
4
6
8
10
Gate-Source Voltage-V
GS
(V)
12
Ta=25°C
I
D
=2A
100
Body Diode Forward Voltage Variation vs Source
Current and Temperature
V
GS
=0V
10
Ta=150°C
1
Ta=25°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -V
SD
(V)
MTN4N60J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Drain-Source Breakdown Voltage
BV
DSS
(V)
800
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.12.26
Page No. : 5/11
Brekdown Voltage vs Ambient Temperature
Capacitance-(pF)
100
Ciss
750
700
10
f=1MHz
Coss
650
I
D
=250μA,
V
GS
=0V
600
-100
-50
0
50
100
150
200
Crss
1
0
5
10
15
20
25
Drain-to-Source Voltage-V
DS
(V)
30
Ambient Temperature-Tj(°C)
Maximum Safe Operating Area
100
10μs
Gate Charge Characteristics
12
V
DS
=120V
Gate-Source Voltage---V
GS
(V)
10
8
6
4
2
0
1000
Drain Current --- I
D
(A)
10
100
μ
s
1ms
V
DS
=300V
V
DS
=480V
1
Operation in this area is
limited by RDS(ON)
Single pulse
Tc=25°C; Tj=150°C, V
GS
=10V
0.01
1
10
100
Drain-Source Voltage -V
DS
(V)
10ms
100ms
DC
0.1
I
D
=4A
0
5
10
15
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
5
4.5
Maximum Drain Current---I
D
4
3.5
3
(A)
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Case Temperature---T
C
(°C)
MTN4N60J3
CYStek Product Specification
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