^Etnl-Conductoi ^Pioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
C147
The C147 Silicon Controlled Rectifier is designed for phase
control applications. This is an all-diffused device which is considerably
smaller in size than comparably rated high power SCR's.
FEATURES:
• High dv/dt With Selections Available
• Excellent Surge and I
2
t Ratings, Providing Easy Fusing
• Compact, Hermetic Package, 1/4-28 Stud
MAXIMUM ALLOWABLE RATINGS
TYPE
REPETITIVE PEAK OFF-STATE
VOLTAGE, V
D R M
>
T, --40°Cto +125°C
100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
REPETITIVE PEAK REVERSE
VOLTAGE, V
R R M
1
Tj - -40°C to +125°C
100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
NON-REPETITIVE PEAK
REVERSE VOLTAGE, V
R S M
1
Tj - +125°C
150 Volts
300
400
500
600
720
840
960
1080
1200
1320
1440
C147A
C147B
C147C
C147D
C147E
C147M
C147S
C147N
C147T
C147P
C147PA
C147PB
'
Half sinewave waveform, 10msec. maximum pulse width.
RMS On-State Current, IT(RMS)
'-
63 Amperes (All Conduction Angles)
Average On-State Current, IT(AV)
Depends on Conduction Angles (See Charts 2 and 3)
Critical Rate-of-Rise of On-State Current (Non-Repetitive) di/dt:*
Switching From 1200 Volts
100 Amperes Per Microsecond
Switching From 600 Volts
200 Amperes Per Microsecond
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I
TSM
(60 Hz)
1000 Amperes
Peak One-Cycle Surge (Non-Repetitive') On-State Current, I
TSM
(50 Hz)
910 Amperes
I
2
t (for fusing), for times > 8.3 milliseconds (See Figure 6)
4150 (RMS Ampere)
2
Seconds
I,
2
t (for fusing), for times > 1.5 milliseconds (See Figure 6)
'Peak Gate Power Dissipation, P
GM
. Average Gate Power Dissipation, PG(AV)
2850 (RMS Ampere)
2
Seconds
100 Watts for 150 Microseconds
2 Watts
Storage Temperature, T
stg
Operating Temperature, Tj
Maximum Stud Torque
-40°C to +150°C
-40°C to -H2S°C
30 Lb.-In.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
C147
CHARACTERISTICS
TEST
SYMBOL
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
Peak Off-State and
Reverse Current
C147A
C147B
C147C
C147D
C147E
C147M
C147S
C147N
C147T
C147P
C147PA
C147PB
DC Gate Trigger C u r r e n t
DC Gate Trigger Voltage
and
'RKM
IpRM
mA
Tj = -40°C to +125°C
VDRM
=
VRRM =
100 Volts Peak
-
-
-
-
-
-
„
_
-
•>
-
-
-
-
_
-
„
-
•v
12
12
12
10
10
10
10
9
8
7
6.5
6
150
300
3
3.5
-
3
250
Volts
mAdc
mAdc
200
300
400
500
600
700
800
900
1000
1100
1200
T
c
= 25°C, V
D
= 12 Vdc, R
L
= 12 Ohms
T
c
= -40°C, V
D
= 12 Vdc, R
L
- 12 Ohms
-
-
„
-
-
-
-
_
-
-
-
-
ICJT
-
VGT
-
-
Vdc
T
c
= 25°C, V
D
= 12 Vdc, R
L
= 12 Ohms
T
c
= -40°C, V
D
= 12 Vdc, R
L
= 12 Ohms,
T
c
= +1 25°C, Rated V
DRM
, R
L
= 1 000 Ohms
T
c
= +25°C, I
TM
= 500 Amperes Peak, 1
Millisecond Wide Pulse. Duty Cycle < 1%
T
c
= +25°C, Anode Supply = 24 Vdc,
Gate Supply = 10V/20 Ohms. Initial For-
ward Pulse = 2 Amps., 0.1 Millisecond to
10 Milliseconds Wide.
T
c
= +125°C, Rated V
D R M
> Using Linear
Kxponential Rising Waveform. Gate Open
Circuited.
VDRM
Exponential dv/dt =
(.632)
0.25
Peak On-State Voltage
Holding Current
VTM
IH
-
Critical Rate-of-Rise of
Off-State Voltage, ( H i g h e r
values may cause device
switching)
dv/dt
200
Volts/
/JSt'C
Higher m i n i m u m civ/dt selection available - consult factory.
Thermal Resistance
Turn-Off Time
Rfljc
tq
-
-
.35
°C/Watt
/usec
Junction-to-Case
Tj * +12S°C
I
TM
= 150 Amps. Peak
V
R
= 50 Volts Min.
V
D R M
(Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 20V/Aisec (Linear)
(6) Commutation di/dt = 5 A/^sec
(7) Repetition Rate = 1 PPS.
(8) Gate Bias During Turn-Off Interval *
0 Volts, 100 Ohms
(1)
(2)
(3)
(4)
(5)
125
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