NRVTSS5100E,
NRVTSAF5100E
Low Leakage Trench-based
Schottky Rectifier
Features
•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMB
CASE 403A
AYWW
TE51G
G
Typical Applications
•
Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
•
•
•
•
•
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
SMA−FL
CASE 403AA
STYLE 6
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AYWW
E51G
G
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Device Meets MSL 1 Requirements
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NRVTSS5100ET3G
NRVTSAF5100ET3G
Package
SMB
(Pb−Free)
SMA−FL
(Pb−Free)
Shipping†
5000 /
Tape & Reel
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
January, 2015
−
Rev. 0
1
Publication Order Number:
NRVTSS5100E/D
NRVTSS5100E, NRVTSAF5100E
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
L
= 100°C)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T
L
= 83°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
J
Value
Unit
V
100
5.0
10
50
−65
to +175
−55
to +175
1B
M3
A
A
A
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Steady State (Note 1)
(NRVTSAF5100E)
Junction−to−Lead
Junction−to−Ambient
(NRVTSS5100E)
Junction−to−Lead
Junction−to−Ambient
1. Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board
R
θJL
R
θJA
R
θJL
R
θJA
25
90
13.1
71.1
Symbol
Max
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(i
F
= 3.0 A, T
J
= 25°C)
(i
F
= 5.0 A, T
J
= 25°C)
(i
F
= 3.0 A, T
J
= 125°C)
(i
F
= 5.0 A, T
J
= 125°C)
Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C, f = 1 MHz)
i
R
Symbol
v
F
Typ
0.56
0.65
0.50
0.56
2.6
2.2
54.4
Max
−
0.69
−
0.62
9
5
mA
mA
pF
Unit
V
C
d
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
10
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1
T
A
= 25°C
10
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 175°C
T
A
= 25°C
1
T
A
=
−55°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T
A
=
−55°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1 1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
10
T
A
= 25°C
T
A
= 25°C
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90 100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
9
8
7
6
5
4
3
2
1
0
0
Figure 4. Maximum Reverse Characteristics
DC
Square Wave
100
R
qJL
= 13.1°C/W
20
40
60
80
100
120
140
160
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode for
NRVTSS5100E
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3
NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
9
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140
T
L
, LEAD TEMPERATURE (°C)
160
Square Wave
DC
R
qJL
= 24.4°C/W
18
16
14
12
10
8
6
4
2
0
0
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
Square Wave
DC
2
3
4
5
6
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1
7
Figure 7. Current Derating per Diode for
NRVTSAF5100E
Figure 8. Forward Power Dissipation
1000
100
R
(t)
, (°C/W)
50% Duty Cycle
20%
10%
5%
2%
10
1
1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 9. Transient Thermal Response, Junction−to−Ambient, for
NRVTSS5100E
100
50% Duty Cycle
20%
10
R
(t)
, (°C/W)
10%
5%
2%
1
1%
0.1
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (S)
0.1
1
10
100
1000
Figure 10. Transient Thermal Response, Junction−to−Ambient, for
NRVTSAF5100E
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4
NRVTSS5100E, NRVTSAF5100E
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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