电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

VJ1206A8R2BXAAC31X

产品描述Ceramic Capacitor, Multilayer, Ceramic, 50V, 1.2195% +Tol, 1.2195% -Tol, C0G, -/+30ppm/Cel TC, 0.0000082uF, 1206,
产品类别无源元件    电容器   
文件大小179KB,共20页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

VJ1206A8R2BXAAC31X概述

Ceramic Capacitor, Multilayer, Ceramic, 50V, 1.2195% +Tol, 1.2195% -Tol, C0G, -/+30ppm/Cel TC, 0.0000082uF, 1206,

VJ1206A8R2BXAAC31X规格参数

参数名称属性值
是否Rohs认证符合
Objectid7119364381
包装说明, 1206
Reach Compliance Codecompliant
ECCN代码EAR99
电容0.0000082 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度1.7 mm
JESD-609代码e3
长度3.2 mm
多层Yes
负容差1.2195%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式SMT
包装方法TR, Paper, 7 Inch
正容差1.2195%
额定(直流)电压(URdc)50 V
参考标准AEC-Q200
系列VJ 31X AUTOMOTIVE
尺寸代码1206
温度特性代码C0G
温度系数30ppm/Cel ppm/°C
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
宽度1.6 mm

文档预览

下载PDF文档
Alternative Device Available, See GA....31G and GA....34G Automotive MLCC
VJ....31X RoHS Automotive MLCC
www.vishay.com
Vishay Vitramon
Surface Mount Multilayer Ceramic Chip Capacitors
for Automotive Applications
FEATURES
• AEC-Q200 qualified with PPAP available
• Available in 0402 to 1812 body size
• High operating temperature
• Wet build process
• Reliable Noble Metal Electrode (NME) system
• Parts compliant with ELV directive
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
For more than 25 years Vishay Vitramon has supported the automotive industry with robust, highly reliable MLCCs that have
made it a leader in this segment. All Vishay Vitramon MLCCs are manufactured in “Precious Metal Technology” (PMT / NME)
and a wet build process. They are qualified according to AEC-Q200 with PPAP available on request. Applications for these
devices include automotive “under the hood”, safety and comfort electronics. Their termination finish is 100 % matte tin plate
finish. A polymer (flexible) termination with 100 % matte tin plate finish is offered for boardflex sensitive applications.
C0G (NP0) DIELECTRIC
GENERAL SPECIFICATION
Note
Electrical characteristics at +25 °C unless otherwise specified
X7R, X8R DIELECTRIC
GENERAL SPECIFICATION
Note
Electrical characteristics at +25 °C unless otherwise specified
Operating Temperature:
-55 °C to +150 °C
(above +125 °C changed characteristics, see 2.2)
Capacitance Range:
1 pF to 22 nF
Voltage Range:
25 V
DC
to 3000 V
DC
Temperature Coefficient of Capacitance (TCC):
0 ppm/°C ± 30 ppm/°C from -55 °C to +125 °C
Dissipation Factor (DF):
0.1 % maximum at 1.0 V
RMS
and
1 MHz for values
1000 pF
0.1 % maximum at 1.0 V
RMS
and
1 kHz for values > 1000 pF
Insulating Resistance:
at +25 °C 100 000 M min. or 1000
F
whichever is less
at +125 °C 10 000 M min. or 100
F
whichever is less
Aging:
0 % maximum per decade
Dielectric Strength Test:
performed per method 103 of EIA 198-2-E.
Applied test voltages
250 V
DC
-rated:
250 % of rated voltage
500 V
DC
-rated:
200 % of rated voltage
630 V
DC
, 1000 V
DC
-rated:
150 % of rated voltage
3000 V
DC
-rated:
120 % of rated voltage
Operating Temperature:
-55 °C to +150 °C
(X7R above +125 °C changed characteristics, see 2.2)
Capacitance Range:
120 pF to 1.0 μF
Voltage Range:
16 V
DC
to 1000 V
DC
Temperature Coefficient of Capacitance (TCC):
X7R: ± 15 % from -55 °C to +125 °C, with 0 V
DC
applied
X8R: ± 15 % from -55 °C to +150 °C, with 0 V
DC
applied
Dissipation Factor (DF):
16 V, 25 V ratings: 3.5 % maximum at 1.0 V
RMS
and 1 kHz
> 25 V ratings: 2.5 % maximum at 1.0 V
RMS
and 1 kHz
Insulating Resistance:
at +25 °C 100 000 M min. or 1000
F
whichever is less
at +125 °C 10 000 M min. or 100
F
whichever is less
X8R: at +150 °C 10 000 M
min. or 100
F whichever is less
Aging Rate:
1 % maximum per decade
Dielectric Strength Test:
performed per method 103 of EIA 198-2-E.
Applied test voltages
250 % of rated voltage
250 V
DC
-rated:
500 V
DC
-rated:
min. 150 % of rated voltage
630 V
DC
, 1000 V
DC
-rated: min. 120 % of rated voltage
Revision: 21-Jan-2020
Document Number: 45226
1
For technical questions, contact:
mlcc@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
STM32+编码器电路设计
想用STM32控制编码器,请问接口部分电路该怎么设计?布线时应该注意什么?谢谢了。 ...
dongsy2012 PCB设计
不容易啊,446天的努力,终于进入前10名
131864...
dontium 聊聊、笑笑、闹闹
2440的ARM开发板上编写windows ce的串口驱动
2440的ARM开发板上编写windows ce的串口驱动,这个串口是用16c2550芯片扩展的总线型的,请问哪位大侠写过或指点一下啊?...
回到当下 ARM技术
本周精彩博文分享
删除UI,使用TI Zigbee 3.0协议栈快速进入产品开发模式 大家好,最近收到很多用户的反馈,在学习使用TI的Zigbee 3.0协议栈Z-Stack 3.0.1过程中,需要花较长的时间来了解和熟悉协议栈例程中UI ......
橙色凯 模拟与混合信号
利用Bcp实现td-scdma上行解码的一些问题
各位大牛: 我现在想利用BCP实现TD-SCDMA中rach的上行解码,用到的模块是ssl+dnt+rd。具体情况如下: SSL模块内配置: wcdma_num_slots=1,q_format=0,mod_type_sel=QPSK,f ......
smith DSP 与 ARM 处理器
BootLoader 创建一个构建环境问题
C:\Documents and Settings\Administrator>SET _WINCEROOT=C:\WINCE600 C:\Documents and Settings\Administrator>CD %_WINCEROOT%\PUBLIC\COMMON\OAK\MISC C:\WINCE600\PUBLIC\COMMON\OA ......
maidi0018 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1229  1  924  319  2679  25  1  19  7  54 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved