电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

A3PN0301QN100YPP

产品描述ProASIC3 nano Flash FPGAs
文件大小6MB,共114页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 全文预览

A3PN0301QN100YPP概述

ProASIC3 nano Flash FPGAs

文档预览

下载PDF文档
Revision 11
ProASIC3 nano Flash FPGAs
Features and Benefits
Wide Range of Features
• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os
Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
Designed to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
Low Power
nano Products
1.5 V Core Voltage for Low Power
Support for 1.5 V-Only Systems
Low-Impedance Flash Switches
ProASIC
®
3
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Enhanced Commercial Temperature Range
• –20°C to +70°C
Table 1 • ProASIC3 nano Devices
ProASIC3 nano Devices
ProASIC3 nano-Z Devices
1
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM Kbits (1,024 bits)
2
4,608-Bit Blocks
2
A3PN010
10,000
86
260
1
A3PN015
1
A3PN020
15,000
128
384
1
4
3
49
QN68
20,000
172
520
1
4
3
49
52
QN68
30,000
256
768
1
6
2
77
83
QN48, QN68
VQ100
A3PN060
60,000
512
1,536
18
4
1
Yes
1
18
2
71
71
A3PN125
125,000
1,024
3,072
36
8
1
Yes
1
18
2
71
71
A3PN250
A3N250Z
1
250,000
2,048
6,144
36
8
1
Yes
1
18
4
68
68
A3PN030Z
1,2
A3PN060Z
1
A3PN125Z
1
FlashROM Kbits
Secure (AES) ISP
VersaNet Globals
I/O Banks
Maximum User I/Os (packaged device)
Maximum User I/Os (Known Good Die)
Package Pins
QFN
VQFP
2
2
4
2
34
34
QN48
Integrated PLL in CCCs
VQ100
VQ100
VQ100
Notes:
1. Not recommended for new designs.
2. A3PN030Z and smaller devices do not support this feature.
3. For higher densities and support of additional features, refer to the
ProASIC3
and
ProASIC3E
datasheets.
† A3PN030 and smaller devices do not support this feature.
January 2013
© 2013 Microsemi Corporation
I
STM32的DMAAD采样值漂
用STM32F103VC做的一款装置,以前用注入式做(3个AD都用到了),采样零漂很小,基本在1个LSB以内(大部分为0),现在改用DMA方式,双AD,结果发现采样值与注入式相比有一定的漂动,不稳定 ......
shesay stm32/stm8
430flash问题
地址写入430后断电,再上电会有一小部分地址变掉是怎么回事????...
775440788 微控制器 MCU
电机控制 - TI 工业自动化解决方案 - 电机控制和驱动
本帖最后由 dontium 于 2015-1-23 12:46 编辑 中英完整版:德州仪器工业自动化解决方案-电机控制/驱动(2011年上半年) TI 的电机控制/驱动解决方案,以最适合的器件、软件、工具及支持,来 ......
德州仪器 模拟与混合信号
k7 multiboot
最近在整k7 multiboot用w25q64(spi flash),系统是win7,平台是ise 14.5.下载一个bit文件合成的mcs文件是可以,但是下载两个bit文件合成的mcs文件,用impact下载到7%时,就会弹出impact停止工 ......
kready FPGA/CPLD
探讨一下密码锁硬件的设计
喜欢密码锁,但看了不少设计,很少人提及密码锁硬件的设计问题。在这里和高手探讨一下:大家做的真正实用的密码锁的设计思路是怎样的? 我这样想不知对不对:一、断电保存密码、可修改密码这些 ......
朱仔 单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2548  465  1130  924  1324  31  24  29  11  28 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved