CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C798J3
Issued Date : 2010.08.12
Revised Date : 2013.12.26
Page No. : 1/11
MTN3N60J3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
: 600V
R
DS(ON)
: 3.6Ω (typ.)
I
D
: 3A
Applications
•
Adapter
•
Switching Mode Power Supply
Symbol
MTN3N60J3
Outline
TO-252(DPAK)
G
G：Gate D：Drain S：Source
D S
Ordering Information
Device
MTN3N60J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN3N60J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C798J3
Issued Date : 2010.08.12
Revised Date : 2013.12.26
Page No. : 2/11
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=3A, V
DD
=50V, L=5mH, R
G
=25
Ω
, starting T
J
=+25
℃
.
3. I
SD
≤3A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting T
J
=+25℃.
V
DS
V
GS
I
D
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
L
P
D
Tj, Tstg
600
±30
3*
1.8*
12*
24.5
3
3.3
4.5
300
50
0.4
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
R
th,j-a
Value
2.5
50
(Note)
110
Unit
°C/W
°C/W
°C/W
Note : When mounted on the minimum pad size recommended (PCB mount).
MTN3N60J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
600
-
2.0
-
-
-
-
-
-
0.65
-
1.8
-
-
-
3.6
11
2
5
10
27
24
30
435
58
10.5
-
-
-
260
1.6
-
-
4.0
-
±
100
1
10
4.5
-
-
-
-
-
-
-
-
-
-
3
12
1.5
-
-
V
V/°C
V
S
nA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C798J3
Issued Date : 2010.08.12
Revised Date : 2013.12.26
Page No. : 3/11
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=1.5A
V
GS
=
±
30
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0, Tj=125
°
C
V
GS
=10V, I
D
=1.5A
nC
V
DS
=480V, I
D
=3A, V
GS
=10V
V
DS
=300V, I
D
=3A, V
GS
=10V,
R
G
=25
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
μC
I
S
=3A, V
GS
=0V
V
GS
=0, I
F
=3A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTN3N60J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
5
Static Drain-Source On-state
Resistance-R
DS(on)
(Ω)
10
15V
10V
9V
7V
6V
Spec. No. : C798J3
Issued Date : 2010.08.12
Revised Date : 2013.12.26
Page No. : 4/11
Static Drain-Source On-resistance vs Ambient Temperature
Drain Current - I
D
(A)
4
3
8
6
5.5V
2
5V
4
I
D
=1.5A,
V
GS
=10V
1
0
0
V
GS
=4.5V
2
20
40
Drain-Source Voltage -V
DS
(V)
60
0
-100
-50
0
50
100
Ambient Temperature-Ta(°C)
150
200
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
4
Static Drain-Source On-State
Resistance-R
DS(on)
(Ω)
V
GS
=10V
3.5
Drain Current-I
D(on)
(A)
3
2.5
2
1.5
1
0.5
Ta=25°C
V
DS
=10V
6
1
0.1
1
Drain Current-I
D
(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
0
5
10
15
Gate-Source Voltage-V
GS
(V)
Forward Drain Current vs Source-Drain Voltage
20
100
Ta=25°C
Static Drain-Source On-State
Resistance-R
DS(ON)
(Ω)
V
GS
=0V
Forward Current-I
F
(A)
16
10
11
Ta=150°C
1
Ta=25°C
6
I
D
=1.5A
1
0
2
4
6
8
10
Gate-Source Voltage-V
GS
(V)
12
0.1
0
0.5
1
1.5
Source Drain Voltage -V
SD
(V)
MTN3N60J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Drain-Source Breakdown Voltage
BV
DSS
(V)
Ciss
800
Spec. No. : C798J3
Issued Date : 2010.08.12
Revised Date : 2013.12.26
Page No. : 5/11
Brekdown Voltage vs Ambient Temperature
750
Capacitance-(pF)
100
Coss
700
10
Crss
f=1MHz
650
I
D
=250μA,
V
GS
=0V
600
-100
-50
0
50
100
150
200
1
0
5
10
15
20
25
Drain-to-Source Voltage-V
DS
(V)
30
Ambient Temperature-Tj(°C)
Maximum Safe Operating Area
100
Operation in this area is
limited by RDS(ON)
Drain Current --- I
D
(A)
10
10μs
100
μ
s
1ms
Gate Charge Characteristics
12
V
DS
=120V
Gate-Source Voltage---V
GS
(V)
10
8
6
4
2
0
I
D
=3A
V
DS
=300V
V
DS
=480V
1
10ms
100ms
0.1
Single Pulse
T
C
=25°C, T
J
=150°C,
0.01
1
10
100
Drain-Source Voltage -V
DS
(V)
DC
1000
0
2
4
6
8
10
12
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
3.5
Maximum Drain Current---I
D
(A)
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Case Temperature---T
C
(°C)
MTN3N60J3
CYStek Product Specification
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