CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 1/9
MTB020N03KJ3
Features
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
V
GS
=10V, I
D
=20A
R
DSON(TYP)
V
GS
=4.5V, I
D
=10A
V
GS
=4V, I
D
=10A
30V
30A
9A
13mΩ
18mΩ
21mΩ
Equivalent Circuit
MTB020N03KJ3
Outline
TO-252(DPAK)
G
D S
G：Gate
D：Drain S：Source
Ordering Information
Package
TO-252
MTB020N03KJ3-0-T3-G
(Pb-free lead plating and halogen-free package)
Device
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25C, V
GS
=10V
Continuous Drain Current @T
C
=100C, V
GS
=10V
Continuous Drain Current @T
A
=25C, V
GS
=10V
Continuous Drain Current @T
A
=100C, V
GS
=10V
Pulsed Drain Current @ V
GS
=10V
Single Pulse Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=5mH, I
D
=6A, V
DD
=15V
T
C
=25C
T
C
=100C
Power Dissipation
T
A
=25C
T
A
=100C
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 2/9
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
Limits
30
±20
30
19
9
5.7
100
21
90
50
20
2.5
1.0
-55~+150
Unit
V
A
(Note 4)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
2.5
50
Unit
C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in
²
FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25°C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C.
3
.
Pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25°C.
4. 100% tested by conditions of L=100μH, I
AS
=10A, V
GS
=10V, V
DD
=15V
MTB020N03KJ3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 3/9
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
13
18
21
3.5
12
2.2
3.4
6.4
17.2
30.8
10.8
440
61.7
46
0.91
5.6
1.7
Max.
-
2.5
±
10
1
25
17
24
28
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
μA
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
16V, V
DS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=30V, V
GS
=0V, T
J
=70C
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=10A
V
GS
=4V, I
D
=10A
V
DS
=10V, I
D
=3A
m
Ω
S
G
FS
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Source-Drain Diode
V
SD
*1
trr
Qrr
nC
V
DS
=15V, I
D
=20A, V
GS
=10V
ns
V
DS
=15V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
ns
nC
I
S
=15A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
300μs,
Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB020N03KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
50
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
45
10V,9V,8V,7V,6V
5V
I
D
, Drain Current (A)
40
35
30
25
20
15
10
5
0
0
1
2
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
4V
V
GS
=3.5V
3
4
5
6
7
8
V
DS
, Drain-Source Voltage(V)
9
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=4V
V
GS
=4.5V
V
GS
=10V
Tj=150°C
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
2.4
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=20A
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=20A
R
DS(ON)
@Tj=25°C : 13mΩtyp.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB020N03KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
Ciss
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
Capacitance---(pF)
1
0.8
0.6
0.4
I
D
=250
μ
A
100
C
oss
Crss
10
0
5
10
15
20
V
DS
, Drain-Source Voltage(V)
25
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
Gate Charge Characteristics
10
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
1
V
DS
=15V
V
GS
, Gate-Source Voltage(V)
8
6
4
2
V
DS
=15V
I
D
=20A
0.1
Ta=25°C
Pulsed
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
10
12
14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
R
DSON
Limited
100
μ
s
1ms
10ms
100m
s
1s
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θJC
=2.5°C/W
Single Pulse
DC
Maximum Drain Current vs Case Temperature
35
I
D
, Drain Current(A)
100
I
D
, Maximum Drain Current(A)
30
25
20
15
10
5
0
V
GS
=10V, R
θJC
=2.5°C/W
10
1
0.1
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB020N03KJ3
CYStek Product Specification
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