CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C159F3
Issued Date : 2015.11.27
Revised Date :
Page No. : 1/9
MTB015P10F3
Features
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@ V
GS
=-10V, T
C
=25°C
I
D
@ V
GS
=-10V, T
A
=25°C
R
DSON(TYP) @
V
GS
=-10V, I
D
=-20A
R
DSON(TYP) @
V
GS
=-4.5V, I
D
=-15A
-100V
-107A
-8.6A
11.6mΩ
13.7mΩ
Symbol
MTB015P10F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Package
Shipping
TO-263
MTB015P10F3-0-T7-X
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
Device
MTB015P10F3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C159F3
Issued Date : 2015.11.27
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=-10V (silicon limit)
Continuous Drain Current @ T
C
=25°C, V
GS
=-10V (package limit)
Continuous Drain Current @ T
C
=100°C, V
GS
=-10V
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ T
A
=25°C , V
GS
=10V
(Note 2)
Continuous Drain Current @ T
A
=70°C , V
GS
=10V
(Note 2)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.1mH, I
D
=-107A, V
DD
=-50V
(Note 3)
Repetitive Avalanche Energy@ L=0.1mH
T
C
=25°C
(Note 1)
Power Dissipation
T
C
=125°C
(Note 1)
T
A
=25°C
(Note 2)
Power Dissipation
T
A
=70°C
(Note 2)
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
(Note 4)
I
DM
I
DSM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
-100
±20
-107
-84
-68
-428
-8.6
-6.9
-107
572
37.5
375
125
2
1.3
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
(Note 2)
R
θJA
Value
0.4
15
62
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4. Calculated continuous drain current based on maximum allowable junction temperature.
5.
The maximum current limited by package is 84A.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTB015P10F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
*Qg(V
GS
=-10V)
*Qg(V
GS
=-4.5V)
*Qgs
*Qgd
*t
d(ON)
*tr
*t
d(OFF)
*t
f
Ciss
Coss
Crss
Rg
Source-Drain Diode
*I
S
*I
SM
*V
SD
*trr
*Qrr
Min.
-100
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
43
-
-
-
11.6
13.7
176
90
20
62
34.6
35.8
169
51
10103
593
161
2.9
-
-
-0.78
29
70
Max.
-
-2.5
-
±
100
-1
-25
15
18
264
135
-
-
51.9
53.7
253.5
76.5
-
-
-
-
-84
-428
-1.2
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C159F3
Issued Date : 2015.11.27
Revised Date :
Page No. : 3/9
V
GS
=0V, I
D
=-250μA
V
DS
= V
GS
, I
D
=-250μA
V
DS
=-10V, I
D
=-10A
V
GS
=
±
20V
V
DS
=-100V, V
GS
=0V
V
DS
=-80V, V
GS
=0V, Tj=125°C
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-15A
nC
I
D
=-90A, V
DS
=-50V, V
GS
=-10V
ns
V
DS
=-50V, I
D
=-90A, V
GS
=-10V, R
G
=1
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=-30V, f=1MHz
f=1MHz
I
S
=-20A, V
GS
=0V
I
F
=-20A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTB015P10F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
200
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C159F3
Issued Date : 2015.11.27
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Junction Temperature
1.4
160
-I
D
, Drain Current(A)
120
80
-
10V
-9V
-8V
-7V
-6V
1.2
1
0.8
0.6
0.4
I
D
=-250μA,
V
GS
=0V
V
GS
=-5V
V
GS
=-4V
40
V
GS
=-3.5V
0
0
0.5
1
1.5 2 2.5 3 3.5 4
-V
DS
, Drain-Source Voltage(V)
4.5
5
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
100
V
GS
=-4.5V
-V
SD
, Source-Drain Voltage(V)
1
0.8
0.6
0.4
0.2
Tj=150°C
Tj=25°C
10
V
GS
=-10V
1
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
0
4
8
12
16
-I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
500
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
400
350
300
250
200
150
100
50
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
I
D
=-
20
A
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
450
2
1.6
1.2
0.8
0.4
0
V
DS
=-10V, I
D
=-20A,
R
DS(ON)
@Tj=25°C : 11.6mΩ typ.
V
GS
=-4.5V, I
D
=-15A
R
DS(ON)
@Tj=25°C : 13.7mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB015P10F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
100000
1.4
1.2
1
0.8
0.6
0.4
0.2
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25 50
I
D
=-250μA
Spec. No. : C159F3
Issued Date : 2015.11.27
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
10000
I
D
=-1mA
1000
C
oss
Crss
100
75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
Gate Charge Characteristics
10
8
6
4
2
I
D
=-90A
V
DS
=-80V
V
DS
=-50V
10
1
V
DS
=-10V
Pulsed
Ta=25°C
0.1
-V
GS
, Gate-Source Voltage(V)
0.01
0.001
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
0
20
40
60 80 100 120 140 160 180 200
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
1000
-I
D
, Maximum Drain Current(A)
R
DS(ON)
Limited
10
μ
s
Maximum Drain Current vs Case Temperature
120
100
80
Package Limit
Silicon Limit
-I
D
, Drain Current(A)
100
100μs
1ms
10
10ms
100ms
DC
60
40
20
0
V
GS
=-10V, R
θ
JC
=0.5°C/W
1
T
C
=25°C, Tj=175°C, V
GS
=-10V,
R
θ
JC
=0.5°C/W single pulse
0.1
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
1000
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB015P10F3
CYStek Product Specification
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