CYStech Electronics Corp.
N- And P-Channel Enhancement Mode Power MOSFET
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 1/13
MTC3588G6
Features
N-CH
BV
DSS
14V
I
D
@ T
A
=25
°C
5.4A(V
GS
=4.5V)
17.6mΩ(V
GS
=4.5V)
24.7mΩ(V
GS
=2.5V)
R
DSON(TYP.)
39.5mΩ(V
GS
=1.8V)
67.3mΩ(V
GS
=1.5V)
P-CH
-14V
-3.6A(V
GS
=-4.5 V)
45.1mΩ(V
GS
=-4.5V)
65.6mΩ(V
GS
=-2.5V)
88.5mΩ(V
GS
=-1.8V)
154.3mΩ(V
GS
=-1.5V)
•
Simple drive requirement
•
Low gate charge
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588G6
Outline
TSOP-6
D1
S1
D2
G：Gate S：Source D：Drain
G1
S2
G2
Ordering Information
Device
MTC3588G6-0-T1-G
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588G6
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
(Note 1)
Continuous Drain Current @T
A
=70
°C
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
(Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
BV
DSS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 2/13
Limits
N-channel P-channel
14
-14
±8
±8
5.4
-3.6
4.3
-2.9
20
-20
1.14
0.01
-55~+150
Unit
V
A
W
W /
°C
°C
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.
2.
Pulse width limited by maximum junction temperature.
N-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
Min.
14
-
0.4
-
-
-
-
-
-
-
-
Typ.
-
8
-
-
-
-
17.6
24.7
39.5
67.3
5.6
407
115
100
5
18.8
49.6
30.8
6.5
0.7
2.3
1
0.87
12
2.3
Max.
-
-
1.0
±100
1
10
25
33
75
115
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
mV/°C
V
nA
μA
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±8V, V
DS
=0V
V
DS
=12V, V
GS
=0V
V
DS
=10V, V
GS
=0V, Tj=70°C
I
D
=5A, V
GS
=4.5V
I
D
=4.6A, V
GS
=2.5V
I
D
=4.1A, V
GS
=1.8V
I
D
=2A, V
GS
=1.5V
V
DS
=5V, I
D
=3A
*R
DS(ON)
mΩ
S
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
-
Rg
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
MTC3588G6
pF
V
DS
=10V, V
GS
=0V, f=1MHz
ns
V
DS
=10V, I
D
=1A, V
GS
=5V, R
G
=3.3
Ω
nC
Ω
V
ns
nC
V
DS
=10V, I
D
=3A, V
GS
=4.5V
f=1MHz
V
GS
=0V, I
S
=5.2A
I
F
=3A, V
GS
=0V, dI
F
/dt=100A/μs
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 3/13
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
P-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
Min.
-14
-
-0.4
-
-
-
-
-
-
-
-
Typ.
-
-5
-
-
-
-
45.1
65.6
88.5
154.3
5.6
561
153
142
5
18.8
49.6
30.8
8
1
2.8
9.3
-0.9
27
7
Max.
-
-
-1.0
±100
-1
-10
60
87
178
305
-
-
-
-
-
-
-
-
-
-
-
-
-1.2
-
-
Unit
V
mV/°C
V
nA
μA
Test Conditions
V
GS
=0V, I
D
=-250μA
Reference to 25°C, I
D
=-1mA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±8V, V
DS
=0V
V
DS
=-12V, V
GS
=0V
V
DS
=-10V, V
GS
=0, Tj=70°C
I
D
=-3.6A, V
GS
=-4.5V
I
D
=-3.2A, V
GS
=-2.5V
I
D
=-1A, V
GS
=-1.8V
I
D
=-1A, V
GS
=-1.5V
V
DS
=-5V, I
D
=-2A
*R
DS(ON)
mΩ
S
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
-
Rg
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
pF
V
DS
=-10V, V
GS
=0V, f=1MHz
ns
V
DS
=-10V, I
D
=-1A, V
GS
=-5V, R
G
=3.3
Ω
nC
Ω
V
ns
nC
V
DS
=-10V, I
D
=-2A, V
GS
=-4.5V
f=1MHz
V
GS
=0V, I
S
=-3.4A
I
F
=-2A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
80
110
Unit
(Note )
°C/W
Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180
°C/W
when mounted on minimum copper pad
MTC3588G6
CYStek Product Specification
CYStech Electronics Corp.
N-channel Typical Characteristics
Typical Output Characteristics
20
5V, 4V, 3.5V, 3V, 2.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 4/13
Brekdown Voltage vs Ambient Temperature
16
1.2
I
D
, Drain Current(A)
12
V
GS
=2V
8
1.0
0.8
I
D
=250
μ
A,
V
GS
=0V
4
V
GS
=1.5V
0.6
0
0
1
2
3
4
5
0.4
-75
-50
-25
0
25
50
75
100 125 150 175
V
DS
, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=1.5V
V
GS
=1.8V
V
GS
=0V
1.0
Tj=25°C
100
0.8
0.6
0.4
0.2
Tj=150°C
10
V
GS
=4.5V
V
GS
=2.5V
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
1
2
3
4
I
DR
, Reverse Drain Current(A)
5
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
V
GS
, Gate-Source Voltage(V)
7
8
1.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
I
D
=5A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
=4.5V, I
D
=5A
R
DS(ON)
@Tj=25°C : 17.6mΩ typ.
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC3588G6
CYStek Product Specification
CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 5/13
Threshold Voltage vs Junction Tempearture
1.6
V
GS(th)
, NormalizedThreshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
I
D
=250
μ
A
1000
Capacitance---(pF)
C
oss
100
Crss
10
0.1
1
V
DS
, Drain-Source Voltage(V)
10
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
40
T
J(MAX)
=150°C
T
A
=25°C
R
θ
JA
=110°C/W
10
Gate Charge Characteristics
I
D
=3A
V
GS
, Gate-Source Voltage(V)
8
V
DS
=10V
Power (W)
30
20
10
0
0.001
6
4
2
0
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
6
8
10
12
14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs JunctionTemperature
6.0
I
D
, Maximum Drain Current(A)
I
D
, Drain Current(A)
10
R
DS(ON)
Limited
100
μ
s
1ms
5.0
4.0
3.0
2.0
1.0
0.0
T
A
=25°C, V
GS
=4.5V, R
θ
JA
=110°C/W
1
10ms
100ms
0.1
T
A
=25°C, Tj=150°C,
V
GS
=4.5V, R
θJA
=110°C/W
Single Pulse
0.1
1
10
DC
0.01
0.01
100
25
50
V
DS
, Drain-Source Voltage(V)
MTC3588G6
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
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