®
LY6164
Rev. 1.4
8K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Issue Date
Aug.3.2005
Initial Issue
Mar.26.2008
Revised
STSOP Package Outline Dimension
Apr.17.2009
Revised Test Condition of I
SB1
/I
DR
Revised V
TERM
to V
T1
and V
T2
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
May.7.2010
Revised
PACKAGE OUTLINE DIMENSION
in page 10
Aug.25.2010
Revised
ORDERING INFORMATION
in page 11
Revised
PACKAGE OUTLINE DIMENSION
in page 9
Rev. 1.3
Rev. 1.4
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY6164
Rev. 1.4
8K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY6164 is a 65,536-bit high speed CMOS static
random access memory organized as 8,192 words
by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6164 is well designed for high speed system
applications, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6164 operates from a single power supply
of 5V and all inputs and outputs are fully TTL
compatible
FEATURES
Fast access time : 8/10/12/15ns
Low power consumption:
Operating current : 110/100/90/80mA (TYP.)
Standby current : 1mA (TYP.)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 28-pin 300 mil SOJ
28-pin 300 mil Skinny P-DIP
28-pin 8mm x 13.4mm STSOP
PRODUCT FAMILY
Product
Family
LY6164
LY6164(E)
LY6164(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
8/10/12/15ns
8/10/12/15ns
8/10/12/15ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
1mA
110/100/90/80mA
1mA
110/100/90/80mA
1mA
110/100/90/80mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A12
DQ0 – DQ7
DECODER
8Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A12
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY6164
Rev. 1.4
8K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
28
27
26
25
24
Vcc
WE#
CE2
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
OE#
A11
A9
A8
CE2
WE#
Vcc
NC
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
LY6164
Skinny PDIP/SOJ
6
7
8
9
10
11
12
13
14
23
22
21
20
19
18
17
16
15
LY6164
STSOP
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY6164
Rev. 1.4
8K X 8 BIT HIGH SPEED CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
V
CC
≧
V
IN
≧
V
SS
Input Leakage Current
I
LI
Output Leakage
V
CC
≧
V
OUT
≧
V
SS,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Average Operating
Power supply Current
Standby Power
Supply Current
I
CC
-8
Cycle time = Min.
CE# = V
IL
and CE2 = V
IH
, -10
-12
I
I/O
= 0mA
Other pins at V
IH
or V
IL
-15
CE#
≧
V
CC
-0.2V or CE2
≦
0.2V
Other pins at 0.2V or V
CC
-0.2V
MIN.
4.5
2.4
- 0.5
-1
-1
2.4
-
-
-
-
-
-
TYP.
5.0
-
-
-
-
-
-
110
100
90
80
1
*4
MAX.
5.5
V
CC
+0.5
0.8
1
1
-
0.4
190
180
160
140
5
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
I
SB1
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY6164
Rev. 1.4
8K X 8 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY6164-8
LY6164-10 LY6164-12 LY6164-15 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
8
-
10
-
12
-
15
-
ns
-
8
-
10
-
12
-
15
ns
-
8
-
10
-
12
-
15
ns
-
4
-
5
-
6
-
7
ns
2
-
2
-
3
-
4
-
ns
0
-
0
-
0
-
0
-
ns
-
4
-
5
-
6
-
7
ns
-
4
-
5
-
6
-
7
ns
3
-
3
-
3
-
3
-
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY6164-8
LY6164-10 LY6164-12 LY6164-15 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
8
-
10
-
12
-
15
-
ns
6.5
-
8
-
10
-
12
-
ns
6.5
-
8
-
10
-
12
-
ns
0
-
0
-
0
-
0
-
ns
6.5
-
8
-
9
-
10
-
ns
0
-
0
-
0
-
0
-
ns
5
-
6
-
7
-
8
-
ns
0
-
0
-
0
-
0
-
ns
1.5
-
2
-
3
-
4
-
ns
-
5
-
6
-
7
-
8
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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