CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C133FP
Issued Date : 2016.01.29
Revised Date :
Page No. : 1/ 8
MTE15P06FP
Features
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DS(ON)
@V
GS
=-10V, I
D
=-64A
-60V
-40A
-7.3A
18.6 mΩ(typ)
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Symbol
MTE15P06FP
Outline
TO-220FP
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTE15P06FP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE15P06FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C133FP
Issued Date : 2016.01.29
Revised Date :
Page No. : 2/ 8
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=-10V
(Note 1)
Continuous Drain Current @T
C
=100°C, V
GS
=-10V
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=-10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=-10V
(Note 2)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @ L=0.5mH, I
D
=-40 Amps,
V
DD
=-50V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
T
C
=25°C
(Note 1)
T
C
=100°C
(Note 1)
Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
T
L
T
PKG
Tj, Tstg
-60
±20
-40*
-28*
-7.3
-5.8
-160*
-40
400
7.5
75
37.5
2
1.3
300
260
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
2
62
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25
°
C.
4. 100% tested by condition of V
DD
=-50V, I
D
=-24A, L=0.5mH, V
GS
=-10V.
MTE15P06FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
-60
-
-2
-
-
-
-
-
Typ.
-
-43
-
22.8
-
-
-
18.6
39
11.8
11
15.6
24
52.8
20
2115
278
124
Spec. No. : C133FP
Issued Date : 2016.01.29
Revised Date :
Page No. : 3/ 8
Max.
-
-
-4
-
±
100
1
10
23.5
-
-
-
-
-
-
-
-
-
-
-40
-160
-1.2
-
-
Unit
V
mV/°C
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=-250μA
Reference to 25°C, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
DS
=-10V, I
D
=-20A
V
GS
=
±
20V
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V, Tj=85°C
V
GS
=-10V, I
D
=-64A
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
V
DD
=-48V, I
D
=-40A,V
GS
=-10V
V
DD
=-30V, I
D
=-40A, V
GS
=-10V,
R
G
=1
Ω
ns
pF
V
GS
=0V, V
DS
=-30V, f=1MHz
-
-
-0.91
16
9
A
V
ns
nC
I
S
=-30A, V
GS
=0V
V
GS
=0V, I
F
=-40A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTE15P06FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
150
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C133FP
Issued Date : 2016.01.29
Revised Date :
Page No. : 4/ 8
Brekdown Voltage vs Ambient Temperature
1.4
10V
9V
-I
D
, Drain Current(A)
120
8V
1.2
1
0.8
0.6
0.4
I
D
=-250
μ
A,
V
GS
=0V
90
7V
60
30
0
0
2
6
V
5.5V
5V
-V
GS
=4.5V
4
6
8
-V
DS
, Drain-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
0.8
0.6
Tj=150°C
-7V
0.4
0.2
-10V
10
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
0
5
10
15
-I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
70
60
50
40
30
20
10
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=-40A
I
D
=-64A
2
1.6
1.2
0.8
0.4
0
V
GS
=-10V, I
D
=-64A
R
DS(ON)
@Tj=25°C : 18.6mΩ
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE15P06FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
1
0.8
0.6
0.4
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25 50
Spec. No. : C133FP
Issued Date : 2016.01.29
Revised Date :
Page No. : 5/ 8
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=-1mA
1000
C
oss
Crss
I
D
=-250μA
100
75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
1000
-V
GS
, Gate-Source Voltage(V)
R
DS(ON)
Limited
10μs
100μs
1ms
Gate Charge Characteristics
10
V
DS
=-30V
8
6
4
2
I
D
=-40A
V
DS
=-48V
-I
D
, Drain Current(A)
100
10
100ms
10ms
1
T
C
=25°C, Tj=175°, V
GS
=-10V
R
θ
JC
=2°C/W, Single Pulse
DC
0.1
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
0
0
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs CaseTemperature
50
45
G
FS
, Forward Transfer Admittance(S)
-I
D
, Maximum Drain Current(A)
10
40
35
30
25
20
15
10
5
0
25
V
GS
=-10V, R
θ
JC
=2°C/W
1
V
DS
=-10V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
50
75
100
125
150
T
C
, Case Temperature(°C)
175
200
MTE15P06FP
CYStek Product Specification
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