CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 1/9
MTE2D4N06F3
Features
•
Simple Drive Requirement
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DSON(TYP) @
V
GS
=10V, I
D
=20A
R
DSON(TYP) @
V
GS
=7V, I
D
=20A
60V
60A
3.3mΩ
3.5mΩ
Symbol
MTE2D4N06F3
Outline
TO-263
G
G：Gate D：Drain S：Source
D
S
Ordering Information
Device
MTE2D4N06F3-0-T7-X
Package
Shipping
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE2D4N06F3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C(silicon limit)
Continuous Drain Current @ T
C
=100°C(silicon limit)
Continuous Drain Current @ T
C
=25°C(package limit)
(Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ T
A
=25°C
(Note 2)
Continuous Drain Current @ T
A
=70°C
(Note 2)
Avalanche Current
(Note 3)
Avalanche Energy @ L=1mH, I
D
=40A, R
G
=25Ω
(Note 4)
T
C
=25°C
(Note 1)
Power Dissipation
T
C
=100°C
(Note 1)
T
A
=25°C
(Note 2)
Power Dissipation
T
A
=70°C
(Note 2)
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
60
±30
188
133
60
480
15
12
120
800
330
165
2
1.3
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max,
(Note 2)
Symbol
R
th,j-c
R
th,j-a
Value
0.45
62.5
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
.
Pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25°C.
4. 100% tested by conditions of L=1mH, I
AS
=25A, V
GS
=15V, V
DD
=25V.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTE2D4N06F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
60
2.0
-
-
-
-
-
-
Typ.
-
-
40.8
-
-
-
3.3
3.5
124.4
22.5
54.0
47.6
55
88.2
40
5871
1011
335
2.9
-
-
0.66
41
53
Max.
-
4.0
-
±
100
1
25
4.5
5.5
-
-
-
-
-
-
-
-
-
-
-
60
480
0.9
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 3/9
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=20A
V
GS
=
±
30V
V
DS
=48V, V
GS
=0V
V
DS
=48V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=20A
V
GS
=7V, I
D
=20A
I
D
=120A, V
DS
=30V, V
GS
=10V
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
ns
V
DS
=30V, I
D
=60A, V
GS
=10V, R
G
=4.7
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=1A, V
GS
=0V
I
F
=20A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTE2D4N06F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
200
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
10V, 9V, 8V
160
I
D
, Drain Current(A)
120
80
6V
7
V
1.2
1
0.8
0.6
0.4
40
V
GS
=5.5V
I
D
=250
μ
A,
V
GS
=0V
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
100
V
GS
=6V
7V
10V
0.8
0.6
Tj=150°C
10
0.4
0.2
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
2.8
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=20A
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=20A
R
DS(ON)
@Tj=25°C :3.3mΩ typ
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE2D4N06F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 5/9
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
=1mA
Capacitance---(pF)
C
oss
1000
I
D
=250μA
Crss
100
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
10
8
6
4
2
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
20
Gate Charge Characteristics
10
1
V
DS
=10V
Pulsed
Ta=25°C
0.1
V
GS
, Gate-Source Voltage(V)
V
DS
=30V
I
D
=120A
0.01
0.001
40
60
80 100 120
Total Gate Charge---Qg(nC)
140
160
Maximum Safe Operating Area
1000
100
μ
s
1ms
10ms
Maximum Drain Current vs Case Temperature
200
I
D
, Maximum Drain Current(A)
R
DS(ON)
Limited
10
μ
s
160
120
80
40
V
GS
=10V, R
θ
JC
=0.45°C/W
package limit
silicon limit
I
D
, Drain Current(A)
100
10
100ms
DC
1
T
C
=25°C, Tj=175°, V
GS
=10V
R
θ
JC
=0.45°C/W, Single
P l
0.1
0.1
0
1000
25
50
75
100 125 150
T
C
, Case Temperature(°C)
175
200
1
10
100
V
DS
, Drain-Source Voltage(V)
MTE2D4N06F3
CYStek Product Specification
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