SMD Schottky Barrier Diode
CDBQR0230L-HF
I
o
= 200 mA
V
R
= 30 Volts
RoHS Device
Halogen Free
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.026(0.65)
0.022(0.55)
0402/SOD-923F
0.041(1.05)
0.037(0.95)
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BA
0.020(0.50) Typ.
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
200
1
125
-40
+125
+125
V
V
mA
A
mW
O
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
P
D
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
I
F
= 200 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.5
30
V
uA
REV:C
QW-G1096
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBQR0230L-HF)
Fig. 1 - Forward characteristics
1000
1m
Fig. 2 - Reverse characteristics
100
Reverse current ( A )
Forward current (mA )
100u
75 C
O
10u
25 C
O
10
C
1u
5
12
O
C
C
O
25
1
75
O
-25
O
C
100n
-25 C
O
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10n
0
5
10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
100
Fig.4 - Current derating curve
Average forward current(%)
f = 1 MHz
Ta = 25 C
100
80
10
60
40
20
1
0
5
10
15
20
25
30
0
0
25
50
75
100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
450
Ta=25 C
IF=200mA
n=30pcs
O
Fig. 6 - IR Dispersion map
50
45
Ta=25 C
VR=10V
n=30pcs
O
Fig. 7 - CT Dispersion map
30
29
Ta=25 C
F=1MHz
VR=0V
n=10pcs
O
35
30
25
20
15
10
5
AVG:4.1816uA
Capacitance between
terminals(pF)
Forward voltage (mV)
Reverse current (uA)
440
40
28
27
26
25
24
23
22
21
20
AVG:22.8pF
430
420
410
AVG:421.28mV
400
0
REV:C
QW-G1096
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
0.75 ± 0.10
0.026
±
0.004
B
1.15 ± 0.10
0.045
±
0.004
C
0.60 ± 0.10
0.024
±
0.004
d
1.55 + 0.10
0.061 + 0.004
D
178 ± 1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
0402
(SOD-923F)
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.10
0.079
±
0.004
T
0.22 ± 0.05
0.009
±
0.002
W
8.00 ± 0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
0402
(SOD-923F)
(mm)
(inch)
REV:C
QW-G1096
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Park Number
CDBQR0230L-HF
Marking Code
BA
BA
Suggested PAD Layout
0402/SOD-923F
SIZE
(mm)
A
B
C
D
E
0.750
0.500
0.700
1.250
0.250
(inch)
0.030
0.020
C
D
A
E
0.028
0.049
0.010
B
Standard Package
Qty per Reel
Case Type
(Pcs)
0402/SOD-923F
5000
Reel Size
(inch)
7
REV:C
QW-G1096
Page 4
Comchip Technology CO., LTD.
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