SMD Switching Diode Arrays
CDSV6-756-G
Forward Current: 0.15A
Reverse Voltage: 75V
RoHS Device
Features
-Fast switching speed.
-Ultra small surface mount package.
-For general purpose swicthing applications.
-High conductance.
0.053(1.35)
0.045(1.15)
SOT-363
0.087(2.20)
0.071(1.80)
Marking: KCA
Diagram:
C
1
A
1
C
2
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
A
1
C
2
A
2
Dimensions in inches and (millimeters)
Maximum Ratings
(at TA=25°C unless otherwise noted)
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Averaged rectified output current
Non-repetitive peak forward surge current
Power dissipation
Thermal resistance, junction to ambient air
Operation junction temperature
Storage temperature range
@t=1.0
μ
S
@t=1.0S
Symbol
V
RRM
V
RWM
V
R
I
FM
I
O
I
FSM
P
D
R
θJA
T
J
T
STG
Limits
75
300
150
2.0
1.0
200
625
150
-65 ~ +150
Unit
V
mA
mA
A
mW
O
C/W
O
C
C
O
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
I
R
=2.5μA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V, f=1.0MHz
I
F
=I
R
=10mA, I
rr
=0.1
×
I
R
, R
L
=100
Ω
Conditions
Symbol
V
(BR)R
Min
75
Typ
Max
Unit
V
Forward voltage
V
F
0.715
0.855
1.000
1.250
2.5
0.025
2
4
V
Reverse leakage current
Junction capacitance
Reverse recovery time
I
R
C
T
t
rr
μA
pF
nS
REV:A
QW-B0036
Page 1
SMD Switching Diode Arrays
ELECTRICAL CHARACTERISTIC CURVES ( CDSV6-756-G)
Fig.1 - Forward Characteristics
1
10000
Fig.2 - Reverse Characteristics
I
F
, Instantaneous Forward Current (A)
I
R
, Instantaneous Reverse Current (nA)
1000
T
A
=150 C
O
T
A
=125 C
O
T
A
=150 C
O
0.1
T
A
=25
O
C
T
A
=0 C
O
100
T
A
=75 C
O
T
A
=75
O
C
T
A
=25 C
O
10
T
A
=0
O
C
0.01
T
A
=-40 C
O
1
T
A
=-40 C
O
0.001
0
0.5
1.0
1.5
0.1
0
20
40
60
80
100
V
F
, Instantaneous Forward Voltage (V)
V
R
, Instantaneous Reverse Voltage (V)
Fig.3 - Capacitance Between
Terminals Characteristics
2.0
300
f=1MHz
Fig.4 - Power Derating Curve
C
T
, Capacitance Between Terminals (pF)
1.6
P
D
, Power Dissipation (mW)
10
250
200
1.2
150
0.8
100
0.4
50
0
0
20
30
40
0
0
25
50
75
100
125
150
V
R
, Reverse Voltage (V)
T
A
, Ambient Temperature (°C)
REV:A
QW-B0036
Page 2
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