DONGGUAN NANJING ELECTRONICS LTD.,
SOT-223 Plastic-Encapsulate Transistors
SOT-223
PZT3904
FEATURES
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
Low Voltage and Low Current
Complementary to PZT3906
General Purpose Amplifier and Switch Application
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
200
1
125
150
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test
conditions
Min
60
40
6
50
50
50
40
70
100
60
0.2
0.3
0.65
300
4
35
35
200
50
0.85
0.95
V
V
V
V
MHz
pF
ns
ns
300
Typ
Max
Unit
V
V
V
nA
nA
nA
I
C
=0.01mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=30V,I
E
=0
V
CE
=30V, V
EB
=3V
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=20V,I
C
=10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
CC
=3V, V
BE(off)
=0.5V I
C
=10mA,
I
B1
= -I
B2
=1mA
V
CC
=3V, I
C
=10mA,
I
B1
=-I
B2
=1mA
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