US2ABF THRU US2MBF
SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 2.0 Amperes
SMBF
Cathode Band
Top View
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case:
JEDEC SMBF molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
SYMBOLS
US2ABF US2BBF US2DBF US2GBF US2JBF US2KBF US2MBF
UNITS
VOLTS
VOLTS
VOLTS
Amps
U2AB
U2BB
U2DB
U2GB
U2JB
U2KB
U2MB
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
R
θ
JL
50
1.0
50
1.3
5.0
100.0
75
60
60
20
-55 to +150
1.6
Amps
Volts
µ
A
ns
pF
C/W
C
Operating junction and storage temperature range T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES US2ABF THRU US2MBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
+0.5
D.U.T
25Vdc
approx
PULSE
GENERATOR
Note 2
0
-0.25
1 ohm
NonInductive
t
rr
+
-
OSCILLOSCOPE
Note 1
-1.0
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Fig.3 Typical Reverse Characteristics
300
Average Forward Current (A)
2.5
100LFM
2.0
I
R
- Reverse Current (
μ
A)
100
T
J
=125
°C
Lead
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7
×12.7mm
) pad areas.
Ambient
10
T
J
=75
°C
1.0
T
J
=25
°C
0.1
0
20
40
60
80
100
Ambient /Lead Temperature (°C)
% of PIV.VOLTS
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
Instaneous Forward Current (A)
Peak Forward Surage Current (A)
20
10
T
J
=25
°C
pulse with 300μs
1% duty cycle
60
50
40
30
20
10
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
US2ABF~US2GBF
US2JBF~US2MBF
1.0
0.1
US2ABF~US2DBF
US2GBF
US2JBF~US2MBF
0.01
0.0
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
FPGA/CPLD
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